Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
G. M. Vanacore ◽  
M. Zani ◽  
G. Isella ◽  
J. Osmond ◽  
M. Bollani ◽  
...  
1992 ◽  
Vol 280 ◽  
Author(s):  
A. Zangwill

ABSTRACTRecent experimental results aimed at the measurement of surface diffusion constants by use of scanning tunnelling microscopy and diffraction techniques have reawakened interest in the statistical properties of two-dimensional island nucleation and growth in the submonolayer regime. Classical homogeneous rate equation studies published over twenty years ago established a simple relationship among the number density of stable islands, the deposition flux, and the adatom surface diffusion constant. Recent Monte Carlo simulation studies confirm this prediction and considerably extend the scope of such a scaling description of submonolayer epitaxial growth. In this article, I review the current status of theory and experiment in this area and suggest some areas for future research.


1999 ◽  
Vol 593 ◽  
Author(s):  
Oleg A. Louchev ◽  
Yoichiro Sato

ABSTRACTThe problem of nanotube growth macrokinetics is viewed within the framework of the continuum surface diffusion equation combined with step-flow growth kinetics. The differences in incorporation rates of adatoms approaching the growth steps from “upper” or lower" terraces are taken into account. These differences can lead to the onset of surface island nucleation in front of a propagating step. This effect is able to cause formation of defects in the growing layer and even to inhibit stable step-flow modes of nanotube growth. The segregation effect of a second phase (BN) in front of the propagating of C layer step is considered, suggesting that it may cause increase in BN concentration and nucleation of islands leading to BN inclusions in C layers or the propagation of a BN layer over C layer.


1995 ◽  
Vol 02 (01) ◽  
pp. 1-8 ◽  
Author(s):  
H. MINODA ◽  
Y. TANISHIRO ◽  
N. YAMAMOTO ◽  
K. YAGI

Growth of Ge on In-adsorbed Si (111)[Formula: see text] and 4×1 surfaces was studied by REM-RHEED. Indium atoms were segregated to the topmost surface during Ge deposition. The formation of the 1×1 structure, which is one of the In-adsorbed structures on the Ge (111) surface, was observed on both the [Formula: see text] structure and the 4×1 surface structures. Suppression of two- and three-dimensional island nucleation of Ge by In predeposition was noticed below 430°C on both surface structures. The critical thickness at which the layer growth mode changed to the island growth mode on the 4×1 surface structure was larger than that on the [Formula: see text] surface structure. Apparent surface diffusion lengths of Ge changed after 2 ML deposition of Ge on the [Formula: see text] surface structure.


Author(s):  
J.T. Fourie

Contamination in electron microscopes can be a serious problem in STEM or in situations where a number of high resolution micrographs are required of the same area in TEM. In modern instruments the environment around the specimen can be made free of the hydrocarbon molecules, which are responsible for contamination, by means of either ultra-high vacuum or cryo-pumping techniques. However, these techniques are not effective against hydrocarbon molecules adsorbed on the specimen surface before or during its introduction into the microscope. The present paper is concerned with a theory of how certain physical parameters can influence the surface diffusion of these adsorbed molecules into the electron beam where they are deposited in the form of long chain carbon compounds by interaction with the primary electrons.


Author(s):  
D. A. Smith

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.


2020 ◽  
Vol 37 (1) ◽  
pp. 23-24
Author(s):  
Bear Williams ◽  
Cara Williams ◽  
Charles I. Carmona
Keyword(s):  

2018 ◽  
Vol 59 (4) ◽  
Author(s):  
Matilde M. Canepa ◽  
Alessandra Gobbi ◽  
Gabriele Tibaldi ◽  
Massimiliano Grassi

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