Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix

2020 ◽  
Vol 127 (11) ◽  
pp. 114301 ◽  
Author(s):  
I. D. Avdeev ◽  
A. V. Belolipetsky ◽  
N. N. Ha ◽  
M. O. Nestoklon ◽  
I. N. Yassievich
2019 ◽  
Vol 31 (38) ◽  
pp. 385301 ◽  
Author(s):  
A V Belolipetsky ◽  
M O Nestoklon ◽  
I N Yassievich

2000 ◽  
Vol 638 ◽  
Author(s):  
Junjie Si ◽  
H. Ono ◽  
K. Uchida ◽  
S. Nozaki ◽  
H. Morisaki

AbstractTwo methods are employed in the gas evaporation technique to form Ge nanocrystals with the Si-passivated surface. One uses one boat with a SiGe alloy as a source, and the other uses two boats each with Si and Ge. As a result of characterization by the x-ray diffraction (XRD) measurement, Raman scattering and x-ray photoelectron spectroscopy (XPS), it is found that Ge nanocrystals with the Si-passivated surface were formed by coevaporation of Si and Ge from two boats, while SiGe alloy nanocrystals were formed by evaporation of the Si-Ge alloy source from one boat.


ChemInform ◽  
2014 ◽  
Vol 45 (18) ◽  
pp. no-no
Author(s):  
Xiaoli Wu ◽  
Longfei Tan ◽  
Dong Chen ◽  
Xianwei Meng ◽  
Fangqiong Tang

2010 ◽  
Author(s):  
Young-Kuk Kim ◽  
Young-Sang Cho ◽  
Kookchae Chung ◽  
Chul-Jin Choi
Keyword(s):  

2013 ◽  
Vol 37 (6) ◽  
pp. 1692 ◽  
Author(s):  
Bao Gao ◽  
Min Zhao ◽  
Qiang Wang ◽  
Kai-Bin Kang ◽  
Zhu-Guo Xu ◽  
...  

ChemInform ◽  
2003 ◽  
Vol 34 (42) ◽  
Author(s):  
Elena V. Shevchenko ◽  
Dmitri V. Talapin ◽  
Heimo Schnablegger ◽  
Andreas Kornowski ◽  
Oerjan Festin ◽  
...  

1999 ◽  
Vol 75 (7) ◽  
pp. 983-985 ◽  
Author(s):  
Yukari Ishikawa ◽  
N. Shibata ◽  
S. Fukatsu

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