scholarly journals Microcontroller-based magnetometer using a single nitrogen-vacancy defect in a nanodiamond

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025323
Author(s):  
E. D. C. Sánchez ◽  
A. R. Pessoa ◽  
A. M. Amaral ◽  
L. de S. Menezes
2004 ◽  
Vol 348 (1-4) ◽  
pp. 292-298 ◽  
Author(s):  
M. Łuszczek ◽  
R. Laskowski ◽  
P. Horodecki

2008 ◽  
Vol 129 (12) ◽  
pp. 124714 ◽  
Author(s):  
Chih-Kai Lin ◽  
Yi-Hsieh Wang ◽  
Huan-Cheng Chang ◽  
M. Hayashi ◽  
S. H. Lin

Small ◽  
2009 ◽  
Vol 5 (14) ◽  
pp. 1649-1653 ◽  
Author(s):  
Bradley R. Smith ◽  
David W. Inglis ◽  
Bjornar Sandnes ◽  
James R. Rabeau ◽  
Andrei V. Zvyagin ◽  
...  

2020 ◽  
Vol 1 (1) ◽  
pp. 015002
Author(s):  
Niels M Israelsen ◽  
Ilya P Radko ◽  
Nicole Raatz ◽  
Jan Meijer ◽  
Ulrik L Andersen ◽  
...  

Nanophotonics ◽  
2012 ◽  
Vol 1 (2) ◽  
pp. 139-153 ◽  
Author(s):  
Stefania Castelletto ◽  
Xiangping Li ◽  
Min Gu

AbstractThe nitrogen vacancy defect centre in diamond has attracted intense research interest owing to their appealing optical and electronic properties, which have laid the ground for new approaches for diffraction unlimited optical methods. In particular, the optical detected magnetic resonance of the electron spin of nitrogen vacancy centre at room temperature underpins many areas in nanophotonics, spintronics and quantum optics. This article reviews the recent development of super-resolution imaging and sensing nanoscopy based on this fascinating defect centre in diamond. These breakthroughs are presently indicating a new class of nanoscale sensors of tiny magnetic and electric fields at room temperature, as well as emerging fluorescent and magnetic probes for next generation nanoscopy and all-optical spin recording.


2017 ◽  
Vol 897 ◽  
pp. 269-274 ◽  
Author(s):  
András Csóré ◽  
Ádám Gali

Paramagnetic defects in solids have become attractive systems for quantum computing as well as magnetometry in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect (NV center) in diamond proposed to be highly promising with respect the afore-mentioned applications. In our study we investigate the NCVSi defect in 3C, 4H and 6H SiC as alternative choices with superior properties. Electronic structure of NV center in SiC exhibits S = 1 triplet ground state with the possibility of optical spin polarization. On the other hand, our results obtained by density functional theory calculations may contribute to unambiguously identify the possible defect configurations.


2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Ronald Ulbricht ◽  
Shuo Dong ◽  
I-Ya Chang ◽  
Bala Murali Krishna Mariserla ◽  
Keshav M. Dani ◽  
...  

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Chang-Youn Moon ◽  
Kee-Suk Hong ◽  
Yong-Sung Kim

We investigate defect properties in hexagonal boron nitride (hBN) which is attracting much attention as a single photon emitter. Using first-principles calculations, we find that nitrogen-vacancy defect V N has a lower energy structure in C 1 h symmetry in 1− charge state than the previously known D 3 h symmetry structure. Noting that carbon has one more valence electron than boron species, our finding naturally points to the correspondence between V N and V N C B defects with one charge state difference between them, which is indeed confirmed by the similarity of atomic symmetries, density of states, and excitation energies. Since V N C B is considered as a promising candidate for the source of single photon emission, our study suggests V N as another important candidate worth attention, with its simpler form without the incorporation of foreign elements into the host material.


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