scholarly journals Improving photoresponsivity in GaAs film grown on Al-induced-crystallized Ge on an insulator

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015153
Author(s):  
T. Nishida ◽  
T. Suemasu ◽  
K. Toko
Keyword(s):  
Gaas Film

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Pumping‐beam‐induced photovoltaic effect on the photoreflectance of a δ‐doped GaAs film

1996 ◽  
Vol 80 (12) ◽  
pp. 6980-6983 ◽  
Author(s):  
D. P. Wang ◽  
C. C. Chen ◽  
T. L. Shen ◽  
T. M. Hsu ◽  
W. C. Lee
Keyword(s):  
Photovoltaic Effect ◽  
Gaas Film

Magnetic field enhanced detection of coherent phonons in a GaMnAs/GaAs film

2020 ◽  
Vol 102 (4) ◽  
Author(s):  
Brenden A. Magill ◽  
Sunil Thapa ◽  
Jade Holleman ◽  
Stephen McGill ◽  
Hiro Munekata ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Gaas Film ◽  
Coherent Phonons

scholarly journals High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer

2019 ◽  
Vol 114 (14) ◽  
pp. 142103 ◽  
Author(s):  
T. Nishida ◽  
K. Moto ◽  
N. Saitoh ◽  
N. Yoshizawa ◽  
T. Suemasu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Seed Layer ◽  
Gaas Film ◽  
Pseudo Single Crystal

GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding

2003 ◽  
Vol 82 (22) ◽  
pp. 3892-3894 ◽  
Author(s):  
N. Chandrasekaran ◽  
T. Soga ◽  
T. Jimbo
Keyword(s):  
Gaas Film ◽  
Si Substrate

Transfer of 3 in GaAs film on silicon substrate by proton implantation process

1998 ◽  
Vol 34 (4) ◽  
pp. 408 ◽  
Author(s):  
E. Jalaguier ◽  
B. Aspar ◽  
S. Pocas ◽  
J.F. Michaud ◽  
M. Zussy ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Gaas Film ◽  
Proton Implantation ◽  
Implantation Process

INTERACTION OF INFRARED ELECTROMAGNETIC WAVES IN RESONANT LAYERED STRUCTURES WITH n-GaAs SEMICONDUCTOR FILM

2009 ◽  
Vol 18 (01) ◽  
pp. 73-83
Author(s):  
V. GRIMALSKY ◽  
S. KOSHEVAYA ◽  
J. ESCOBEDO-A
Keyword(s):  
Electric Field ◽  
Total Internal Reflection ◽  
Electromagnetic Waves ◽  
Oblique Incidence ◽  
Modulation Instability ◽  
Semiconductor Film ◽  
Gaas Film ◽  
Short Pulses ◽  
Bias Electric Field ◽  
Resonant Transmission

Interaction of infrared electromagnetic (EM) waves in a layered structure with n- GaAs film is investigated theoretically. An oblique incidence of EM wave is considered, when the total internal reflection and resonant transmission occur. It is demonstrated that this structure modulates effectively the infrared EM wave. The modulation mechanism is due to the transfer of electrons from the upper valley to the higher ones in a strong bias electric field. An interaction of strong incident infrared EM pulses with this structure is also considered in the case of the absence of a bias electric field. Both the nonlinear switching of short pulses and the modulation instability of long strong pulses take place.

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