Pumping‐beam‐induced photovoltaic effect on the photoreflectance of a δ‐doped GaAs film

1996 ◽  
Vol 80 (12) ◽  
pp. 6980-6983 ◽  
Author(s):  
D. P. Wang ◽  
C. C. Chen ◽  
T. L. Shen ◽  
T. M. Hsu ◽  
W. C. Lee
Keyword(s):  
Photovoltaic Effect ◽  
Gaas Film

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI
Keyword(s):  
Photovoltaic Effect ◽  
Experimental Investigations ◽  
Semiconductor Superlattices

Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

2017 ◽  
Author(s):  
C.Q. Chen ◽  
P.T. Ng ◽  
G.B. Ang ◽  
Francis Rivai ◽  
S.L. Ting ◽  
...  
Keyword(s):  
Image Analysis ◽  
Failure Analysis ◽  
Photovoltaic Effect ◽  
Electrical Characterization ◽  
Fault Isolation ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Current Image ◽  
Scaling Down ◽  
Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

scholarly journals Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 4987
Author(s):  
Jianlong Liu ◽  
Xin Li ◽  
Ruirui Jiang ◽  
Kaiqiang Yang ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Recent Progress ◽  
Photovoltaic Effect ◽  
Dimensional Structure ◽  
High Electron ◽  
Terahertz Waves ◽  
Terahertz Detectors ◽  
Basic Part ◽  
Suitable Material ◽  
Terahertz Region ◽  
Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

Enhancing ferroelectric photovoltaic effect of BaTiO 3 by the lateral interface

2021 ◽  
Author(s):  
Lijing Wei ◽  
Changliang Li ◽  
Li Guan ◽  
Jianxin Guo
Keyword(s):  
Photovoltaic Effect

Surface photovoltaic effect and electronic structure of β -InSe

2020 ◽  
Vol 4 (12) ◽  
Author(s):  
L. Kang ◽  
L. Shen ◽  
Y. J. Chen ◽  
S. C. Sun ◽  
X. Gu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photovoltaic Effect

Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core–shell nanoparticles

2021 ◽  
Vol 118 (12) ◽  
pp. 122101
Author(s):  
Xinyuan Dong ◽  
Diyuan Zheng ◽  
Jing Lu ◽  
Yiru Niu ◽  
Binbin Liu ◽  
...  
Keyword(s):  
Photovoltaic Effect ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Core Shell Nanoparticles

Photovoltaic Effect Induced by Self-Polarization in BiFeO3 Films

2021 ◽  
Author(s):  
Ze Li ◽  
Yu Zhao ◽  
Wei-Li Li ◽  
Ruixuan Song ◽  
Wenyue Zhao ◽  
...  
Keyword(s):  
Photovoltaic Effect

scholarly journals Exchange striction driven magnetodielectric effect and potential photovoltaic effect in polar CaOFeS

2017 ◽  
Vol 1 (3) ◽  
Author(s):  
Yang Zhang ◽  
Lingfang Lin ◽  
Jun-Jie Zhang ◽  
Xin Huang ◽  
Ming An ◽  
...  
Keyword(s):  
Photovoltaic Effect ◽  
Magnetodielectric Effect

scholarly journals TiO2 Nanotubes Architectures for Solar Energy Conversion

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 931
Author(s):  
Yin Xu ◽  
Giovanni Zangari
Keyword(s):  
Solar Energy ◽  
Tio2 Nanotubes ◽  
Fossil Fuels ◽  
Photovoltaic Effect ◽  
Electric Energy ◽  
Chemical Species ◽  
Electrochemical Anodization ◽  
Science And Engineering ◽  
Electric Energy Storage ◽  
The Usa

Electromagnetic light from the Sun is the largest source, and the cleanest energy available to us; extensive efforts have been dedicated to developing science and engineering solutions in order to avoid the use of fossil fuels. Solar energy transforms photons into electricity via the photovoltaic effect, generating about 20 GW of energy in the USA in 2020, sufficient to power about 17 million households. However, sunlight is erratic, and technologies to store electric energy storage are unwieldy and relatively expensive. A better solution to store energy and to deliver this energy on demand is storage in chemical bonds: synthesizing fuels such as H2, methane, ethanol, and other chemical species. In this review paper we focus on titania (TiO2) nanotubes grown through electrochemical anodization and various modifications made to them to enhance conversion efficiency; these semiconductors will be used to implement the synthesis of H2 through water splitting. This document reviews selected research efforts on TiO2 that are ongoing in our group in the context of the current efforts worldwide. In addition, this manuscript is enriched by discussing the latest novelties in this field.

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