scholarly journals Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

APL Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 011107 ◽  
Author(s):  
P. Mazzolini ◽  
A. Falkenstein ◽  
C. Wouters ◽  
R. Schewski ◽  
T. Markurt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Orientation Dependence ◽  
Metal Exchange ◽  
Substrate Orientation

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Brian P. Gorman ◽  
Andrew G. Norman ◽  
Reiko Lukic-Zrnic ◽  
Terry D. Golding ◽  
Chris L. Littler
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Energy Gap ◽  
Atomic Ordering ◽  
Substrate Orientation ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTSpontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.

Effect of substrate orientation on the defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

1991 ◽  
Vol 50 (1-4) ◽  
pp. 233-236 ◽  
Author(s):  
Nobukazu Ohnishi ◽  
Yunosuke Makita ◽  
Akimasa Yamada ◽  
Hisao Asakura ◽  
Tokue Matsumori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Orientation

Effect of The Orientation of The Magnetic Field on The Giant Magnetoresistance of Fe/Cr Superlattices

1995 ◽  
Vol 384 ◽  
Author(s):  
V.V. Ustinov ◽  
V.I. Minin ◽  
L.N. Romashev ◽  
A.B. Semerikov ◽  
A.R. Del
Keyword(s):  
Magnetic Field ◽  
Molecular Beam Epitaxy ◽  
Field Strength ◽  
Magnetization Curve ◽  
Giant Magnetoresistance ◽  
Molecular Beam ◽  
Orientation Dependence ◽  
Arbitrary Orientation ◽  
Strength Dependence ◽  
The Magnetic Field

ABSTRACTWe study the magnetoresistance of [Fe/Cr]30/MgO superlattices grown by molecular beam epitaxy at a various magnetic field directions. The theory of the orientation dependence of the effect is developed. It is shown that the magnetic field strength dependence of magnetoresistance can be calculated for arbitrary orientation of magnetic field if this dependence is known for in-plane and perpendicular-to-plane magnetic fields. It is noted that the magnetization curve can be obtained by making use of the results of the magnetoresistance measurements.

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