Hydrogen behavior under X-ray irradiation for a-IGZO thin film transistors

2020 ◽  
Vol 116 (1) ◽  
pp. 013502 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Tae-Kwon Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
Kyong-Joo Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
X Ray

Development of Top-Gate Nanocrystalline Si:H Thin Film Transistors

2004 ◽  
Vol 808 ◽  
Author(s):  
Jarrod McDonald ◽  
Vikram L. Dalal ◽  
Max Noack
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Breakdown Strength ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Interface State ◽  
Nitride Layer ◽  
High Ratio ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe report on the growth and fabrication of top gate thin film transistors at low temperatures in nanocrystalline Si:H. The nanocrystalline Si:H was deposited using a VHF-PECVD plasma process at 45 MHz in a diode reactor. The material was deposited from a mixture of silane and hydrogen at a temperature of 250-300°C. Higher temperatures resulted in a loss of hydrogen from the material. The properties of the nanocrystalline Si:H were studied using x-ray diffraction and Raman spectroscopy. The material showed a high ratio (3.8) between the crystalline and amorphous peaks in the Raman spectrum. X-ray diffraction data showed the films to be predominantly oriented in <111> direction, and the grain size estimated from Scherer's formula was in the range of 12-15 nm. The doping of the material could be changed by introducing ppm levels of Boron or Phosphorus. The as-grown material was generally n type. By adding controlled amounts of B, the material could be made p type. The devices made were n-channel MISFET's with p body. The n+ source and drain layers were made from amorphous Si:H. A systematic investigation of the appropriate oxide/nitride layer to be used was undertaken. The nitride layers were grown at 250-300°C using mixtures of silane and ammonia, with a high degree of dilution by helium. The presence of helium dilution, along with post-deposition passivation by a hydrogen plasma, was found to produce reproducible, low interface defect density nitride materials. Interface state densities were measured using capacitance spectroscopy at different frequencies and temperatures and found to be in the range of 4.5x1011/cm2-eV. The breakdown strength of the nitride was measured and found to be 4 MV/cm. Proof-of-concept TFT devices were fabricated using reactive ion etching. The threshold voltage was in the range of 13-15 V, and the on/off ratio was in the range of 103.

scholarly journals Percolation of Carbon Nanoparticles in Poly(3-Hexylthiophene) Enhancing Carrier Mobility in Organic Thin Film Transistors

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Chang-Hung Lee ◽  
Chun-Hao Hsu ◽  
Iu-Ren Chen ◽  
Wen-Jong Wu ◽  
Chih-Ting Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carbon Nanoparticles ◽  
Carrier Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Printing System

To improve the field-effect mobility of all-inkjet-printed organic thin film transistors (OTFTs), a composite material consisted of carbon nanoparticles (CNPs) and poly(3-hexylthiophene) (P3HT) was reported by using homemade inkjet-printing system. These all-inkjet-printed composite OTFTs represented superior characteristics compared to the all-inkjet-printed pristine P3HT OTFTs. To investigate the enhancement mechanism of the blended materials, the percolation model was established and experimentally verified to illustrate the enhancement of the electrical properties with different blending concentrations. In addition, experimental results of OTFT contact resistances showed that both contact resistance and channel resistance were halved. At the same time, X-ray diffraction measurements, Fourier transform infrared spectra, ultraviolet-visible light, and photoluminescence spectra were also accomplished to clarify the material blending effects. Therefore, this study demonstrates the potential and guideline of carbon-based nanocomposite materials in all-inkjet-printed organic electronics.

Corrections to “Total-Dose Effect of X-ray Irradiation on Low-TemperaturePolycrystalline Silicon Thin-Film Transistors”

2020 ◽  
Vol 41 (9) ◽  
pp. 1448-1448
Author(s):  
Ya-Hsiang Tai ◽  
Shan Yeh ◽  
Shih-Hsuan Huang ◽  
Ting-Chang Chang
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Thin Film Transistors ◽  
Dose Effect ◽  
Silicon Thin Film ◽  
X Ray

Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

2005 ◽  
Vol 86 (23) ◽  
pp. 232103 ◽  
Author(s):  
S. J. Kang ◽  
Y. Yi ◽  
C. Y. Kim ◽  
C. N. Whang ◽  
T. A. Callcott ◽  
...  
Keyword(s):  
Thin Film ◽  
Fluorescence Spectroscopy ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
X Ray

X-ray photoelectron spectroscopy analysis of the effect of photoresist passivation on InGaZnO thin-film transistors

2019 ◽  
Vol 471 ◽  
pp. 403-407 ◽  
Author(s):  
Peng Xiao ◽  
Junhua Huang ◽  
Ting Dong ◽  
Jian Yuan ◽  
Dong Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Thin Film Transistors ◽  
Spectroscopy Analysis ◽  
X Ray

A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

2010 ◽  
Vol 25 (2) ◽  
pp. 266-271 ◽  
Author(s):  
Kyung Park ◽  
Chee-Hong An ◽  
Byung-Il Hwang ◽  
Hoo-Jeong Lee ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Film Transistors ◽  
Device Performance ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
X Ray ◽  
Thermodynamics And Kinetics ◽  
Transmission Electron ◽  
Scanning Electron

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400∼500 °C) and then the Mo oxide further reacted with IGZO to produce an In–Mo–O compound with some Ga at higher temperatures (600∼700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

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