Corrections to “Total-Dose Effect of X-ray Irradiation on Low-TemperaturePolycrystalline Silicon Thin-Film Transistors”

2020 ◽  
Vol 41 (9) ◽  
pp. 1448-1448
Author(s):  
Ya-Hsiang Tai ◽  
Shan Yeh ◽  
Shih-Hsuan Huang ◽  
Ting-Chang Chang
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Thin Film Transistors ◽  
Dose Effect ◽  
Silicon Thin Film ◽  
X Ray

Effects of X-ray radiation on hydrogenated amorphous silicon thin-film transistors and characteristics of tungsten shield layer

2010 ◽  
Vol 10 (1) ◽  
pp. 184-186
Author(s):  
Hee-suk Pang ◽  
Yun-sik Jeong ◽  
Hong-Seok Choi ◽  
Chang-Wook Han ◽  
Yoon-Heung Tak ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
X Ray ◽  
Hydrogenated Amorphous

scholarly journals Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

2008 ◽  
Vol 1066 ◽  
Author(s):  
L. E. Antonuk ◽  
M. Koniczek ◽  
J. McDonald ◽  
Y. El-Mohri ◽  
Q. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Noise Power ◽  
Silicon Thin Film ◽  
X Ray ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
Active Pixel ◽  
Noise Characterization

ABSTRACTAn examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

scholarly journals Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

2006 ◽  
Vol 99 (6) ◽  
pp. 064501 ◽  
Author(s):  
Yixin Li ◽  
Larry E. Antonuk ◽  
Youcef El-Mohri ◽  
Qihua Zhao ◽  
Hong Du ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
X Ray

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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