Optimization of process parameters of thin film deposition in solar PV cells using magnetron sputtering process

2019 ◽  
Author(s):  
Natarajan Purushothaman ◽  
R. Elansezhian ◽  
A. V. Raviprakash
Vacuum ◽  
2019 ◽  
Vol 160 ◽  
pp. 410-417 ◽  
Author(s):  
D.L. Ma ◽  
H.Y. Liu ◽  
Q.Y. Deng ◽  
W.M. Yang ◽  
K. Silins ◽  
...  

1989 ◽  
Vol 176 (2) ◽  
pp. 219-226 ◽  
Author(s):  
M.M.D. Ramos ◽  
J.B. Almeida ◽  
M.I.C. Ferreira ◽  
M.P. Dos Santos

Author(s):  
Peter Ifeolu Odetola ◽  
Patricia A. P. Popoola ◽  
Philip Oladijo

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.


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