scholarly journals Reliability of analog resistive switching memory for neuromorphic computing

2020 ◽  
Vol 7 (1) ◽  
pp. 011301 ◽  
Author(s):  
Meiran Zhao ◽  
Bin Gao ◽  
Jianshi Tang ◽  
He Qian ◽  
Huaqiang Wu
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22070-22074 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tianjiao Dai ◽  
Lei Li ◽  
Xinnan Lin ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Multi Level ◽  
Switching Memory

This work investigated the influence of surrounding material on RRAM and offered a strategy to achieve multilevel storage functionality with superior scalability and stability, suggesting its potential to be applied in neuromorphic computing area.

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