scholarly journals Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning

2019 ◽  
Vol 115 (23) ◽  
pp. 231602
Author(s):  
David A. J. Millar ◽  
Uthayasankaran Peralagu ◽  
Xu Li ◽  
Matthew J. Steer ◽  
Yen-Chun Fu ◽  
...  
Keyword(s):  
Plasma Cleaning ◽  
Surface Inversion

scholarly journals Performance Improvements of Local Electrodes from In-situ Plasma Cleaning

2009 ◽  
Vol 15 (S2) ◽  
pp. 286-287 ◽  
Author(s):  
R Ulfig ◽  
S Gerstl ◽  
TJ Prosa
Keyword(s):  
Plasma Cleaning ◽  
Performance Improvements

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Sputtering tests of single crystal molybdenum and rhodium mirrors at high ion fluence for in situ plasma cleaning of first mirrors in ITER

2018 ◽  
Vol 128 ◽  
pp. 107-112 ◽  
Author(s):  
J. Peng ◽  
A. Litnovsky ◽  
A. Kreter ◽  
Yu. Krasikov ◽  
M. Rasinski ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Cleaning

In-situ plasma cleaning of stainless steel III-V MOCVD growth systems

1992 ◽  
Vol 21 (2) ◽  
pp. 149-156 ◽  
Author(s):  
S. Li ◽  
G. S. Tompa ◽  
K. Moy ◽  
S. B. West ◽  
C. R. Nelson ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Plasma Cleaning ◽  
Mocvd Growth

ChemInform Abstract: In situ Remote H-Plasma Cleaning of Patterned Si-SiO2 Surfaces.

ChemInform ◽  
2010 ◽  
Vol 26 (6) ◽  
pp. no-no
Author(s):  
R. J. CARTER ◽  
T. P. SCHNEIDER ◽  
J. S. MONTGOMERY ◽  
R. J. NEMANICH
Keyword(s):  
Plasma Cleaning

Improvement of Gaas Crystal Quality on Si Grown by Mocvd Through Two-Dimensional-Like Nucleation with Low Temperature in Situ Hydrogen/Arsine Plasma Cleaning

1990 ◽  
Vol 202 ◽  
Author(s):  
Euijoon Yoon ◽  
Rafael Reif
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Crystal Quality ◽  
Ex Situ ◽  
Plasma Cleaning ◽  
Two Dimensional ◽  
Gaas Crystal ◽  
Hydrogen Atoms ◽  
Slow Kinetics

ABSTRACTWe report the significant improvement of GaAs crystal quality on Si grown by metal-organic chemical vapor deposition (MOCVD) with an in situ low temperature hydrogen/arsine plasma cleaning of the Si substrate at 450°C and a consequent controlled two-dimensional-like morphology of the low temperature buffer layer at its early stage. The most critical step that determines the interfacial cleanliness and the early stages of the nucleation and thin film formation of heteroepitaxial GaAs on Si in a non-ultrahigh vacuum MOCVD system is the substitution of hydrogen atoms passivating the Si surface after ex situ HF-dip with pas-sivating As atoms. Reduction of in situ cleaning temperature ensures the very slow kinetics of thermal desorption of the hydrogen atoms and re-oxidation of exposed Si surface from the reactor environment, and provides a fully As-passivated Si surface, leading to a 2D-like buffer layer.

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