Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation

2019 ◽  
Vol 126 (12) ◽  
pp. 125902
Author(s):  
Wanzhen He ◽  
Changqing Chen ◽  
Zhiping Xu
2001 ◽  
Vol 90 (4) ◽  
pp. 1710-1717 ◽  
Author(s):  
K. Nordlund ◽  
J. Peltola ◽  
J. Nord ◽  
J. Keinonen ◽  
R. S. Averback

2019 ◽  
Vol 31 (3) ◽  
pp. 035302 ◽  
Author(s):  
Sadegh Ghaderzadeh ◽  
Mahdi Ghorbani-Asl ◽  
Silvan Kretschmer ◽  
Gregor Hlawacek ◽  
Arkady V Krasheninnikov

Nanoscale ◽  
2021 ◽  
Author(s):  
Saransh Gupta ◽  
Prakash Periasamy ◽  
Badri Narayanan

Classical molecular dynamics simulations show that production, accumulation, and evolution of defects in monolayer phosphorene can be precisely controlled by varying fluence of noble gas ion radiation.


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