Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

2001 ◽  
Vol 90 (4) ◽  
pp. 1710-1717 ◽  
Author(s):  
K. Nordlund ◽  
J. Peltola ◽  
J. Nord ◽  
J. Keinonen ◽  
R. S. Averback
2019 ◽  
Vol 31 (3) ◽  
pp. 035302 ◽  
Author(s):  
Sadegh Ghaderzadeh ◽  
Mahdi Ghorbani-Asl ◽  
Silvan Kretschmer ◽  
Gregor Hlawacek ◽  
Arkady V Krasheninnikov

Nanoscale ◽  
2021 ◽  
Author(s):  
Saransh Gupta ◽  
Prakash Periasamy ◽  
Badri Narayanan

Classical molecular dynamics simulations show that production, accumulation, and evolution of defects in monolayer phosphorene can be precisely controlled by varying fluence of noble gas ion radiation.


1997 ◽  
Vol 469 ◽  
Author(s):  
K. Nordlund ◽  
R. S. Averback ◽  
T. Diaz de la Rubia

ABSTRACTWe study the mechanisms of damage production during ion irradiation using molecular dynamics simulations of 400 eV -10 keV collision cascades in four different materials. The materials Al, Si, Cu and Ge are contrasted to each other with respect to the mass, melting temperature and crystal structure. The results show that the crystal structure clearly has the strongest effect on the nature of the damage produced, and elucidate how the open crystal structure affects the nature of defects produced in silicon.


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