Design and validation of a ten nanosecond resolved resistive thermometer for Gaussian laser beam heating

2019 ◽  
Vol 90 (12) ◽  
pp. 124903
Author(s):  
Letian Wang ◽  
Dongwoo Paeng ◽  
Zeqing Jin ◽  
He Zhang ◽  
Y. S. Kim ◽  
...  
1998 ◽  
Vol 42 (5) ◽  
pp. 809-816 ◽  
Author(s):  
D. Abbott ◽  
B. Davis ◽  
B. Gonzalez ◽  
A. Hernandez ◽  
K. Eshraghian

1989 ◽  
Vol 28 (Part 2, No. 5) ◽  
pp. L734-L737 ◽  
Author(s):  
Kiyohiko Yoshino ◽  
Kouichi Murakami ◽  
Kohzoh Masuda

2005 ◽  
Vol 17 (4) ◽  
pp. 256-262 ◽  
Author(s):  
D. Zeng ◽  
W. P. Latham ◽  
A. Kar

1997 ◽  
Vol 37 (12) ◽  
pp. 1841-1847 ◽  
Author(s):  
Kiyoshi Nikawa ◽  
Shoji Inoue

2012 ◽  
Vol 15 ◽  
pp. 129-139 ◽  
Author(s):  
A.K. ALEKSANYAN ◽  
A.K. MINASYAN ◽  
R.S. HAKOBYAN

Laser beam heating the medium induces instability in the liquid crystal (LC) cell. This instability in conjunction with influence of gravitational force results in convective motions in the cell. In this paper theoretical modeling for studying convection induced by Gaussian laser beam in nematic LC homeotrop and planar cells is presented for the first time. Velocity field and LC director distribution are obtained for various light powers and LC cell sizes by solving Navier-Stokes, heat transfer and director equations simultaneously. The modeling allows us to solve the problems of convections induced by Gaussian laser beam due to Rayleigh-Benard and Marangoni mechanisms as well. There is a good qualitative agreement between theoretical calculations and prior experimental results. The possibility of control and stability of convective motions are studied. Instabilities of the Benard cells are of thermal origin because the Prandtl number for the medium under study is considerably larger than unity.


1982 ◽  
Vol 17 ◽  
Author(s):  
Dimitry Kirillov ◽  
James L. Merz

ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.


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