Ferroelectric domain structures and temperature-misfit strain phase diagrams of K1-xNaxNbO3 thin films: A phase-field study

2019 ◽  
Vol 115 (9) ◽  
pp. 092902 ◽  
Author(s):  
Bo Wang ◽  
Hao-Nan Chen ◽  
Jian-Jun Wang ◽  
Long-Qing Chen
Keyword(s):  
Thin Films ◽  
Field Study ◽  
Phase Diagrams ◽  
Phase Field ◽  
Misfit Strain ◽  
Ferroelectric Domain ◽  
Domain Structures

Ferroelectric domain structures in SrBi2Nb2O9 epitaxial thin films: Electron microscopy and phase-field simulations

2004 ◽  
Vol 95 (11) ◽  
pp. 6332-6340 ◽  
Author(s):  
Y. L. Li ◽  
L. Q. Chen ◽  
G. Asayama ◽  
D. G. Schlom ◽  
M. A. Zurbuchen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Phase Field ◽  
Ferroelectric Domain ◽  
Epitaxial Thin Films ◽  
Domain Structures

Understanding Domain Structures in BiFeO3 Thin Films by Combining Phase-Field Simulations, TEM, and PFM

2010 ◽  
Vol 16 (S2) ◽  
pp. 318-319
Author(s):  
G Sheng ◽  
JX Zhang ◽  
B Winchester ◽  
PP Wu ◽  
YL Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Field ◽  
Domain Structures ◽  
Bifeo3 Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films

2008 ◽  
Vol 103 (9) ◽  
pp. 094111 ◽  
Author(s):  
J. X. Zhang ◽  
Y. L. Li ◽  
S. Choudhury ◽  
L. Q. Chen ◽  
Y. H. Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ferroelectric Domain ◽  
Domain Structures ◽  
Bifeo3 Thin Films

Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method

2019 ◽  
Vol 49 (1) ◽  
pp. 127-152 ◽  
Author(s):  
Jian-Jun Wang ◽  
Bo Wang ◽  
Long-Qing Chen
Keyword(s):  
Phase Field ◽  
Domain Switching ◽  
Field Method ◽  
Ferroelectric Domain ◽  
Switching Behavior ◽  
Phase Field Method ◽  
Local Domain ◽  
Mechanical Stimuli ◽  
Structure Property ◽  
Domain Structures

Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.

Compositional Control of Ferroelectric Domain Structures in Eteroepitaxial PLZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
K. S. Lee ◽  
Y. M. Kang ◽  
S. Baik
Keyword(s):  
Thin Films ◽  
Transformation Strain ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Domain ◽  
Ex Situ ◽  
Cubic Phase ◽  
Domain Formation ◽  
Axis Orientation ◽  
Domain Structures ◽  
Plzt Thin Films

ABSTRACTThe mechanism and control of ferroelectric domain formation in heteroepitaxial (Pb1−xLax)(ZryTi1-y)O3 (PLZT) thin films grown on MgO(001) substrates have been investigated as a function of composition and temperature. Pulsed laser deposition and RF magnetron sputtering techniques were used and optimized to fabricate epitaxial thin films with varying La and/or Zr concentrations. Periodic 9° domain structures were developed when the film transformed from the cubic phase to the tetragonal phase during cooling after deposition. As a result of the tetragonality of the films, the domain formation induced slightly tilted twin structures. All films were grown highly c axis oriented and the degree of c axis orientation was improved with increasing La or Zr concentration. Experimental observations of the 90° domain evolution in films have been carried out in-situ and ex-situ using conventional and synchrotron X-ray diffraction and demonstrated that the most important parameter affecting the domain structure and its abundance is the transformation strain at the Curie temperature, which can be varied systematically by changing the concentration of La and/or Zr in the PLZT system.

Ferroelectric Domain Structures in Epitaxial PZT Thin Films: A Review

2002 ◽  
Vol 46 (1) ◽  
pp. 307-328 ◽  
Author(s):  
Kilho Lee ◽  
Kyeong Seok Lee ◽  
Yong Kwan Kim ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Ferroelectric Domain ◽  
Pzt Thin Films ◽  
Domain Structures
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