Ferroelectric domain structures in SrBi2Nb2O9 epitaxial thin films: Electron microscopy and phase-field simulations

2004 ◽  
Vol 95 (11) ◽  
pp. 6332-6340 ◽  
Author(s):  
Y. L. Li ◽  
L. Q. Chen ◽  
G. Asayama ◽  
D. G. Schlom ◽  
M. A. Zurbuchen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Phase Field ◽  
Ferroelectric Domain ◽  
Epitaxial Thin Films ◽  
Domain Structures

Understanding Domain Structures in BiFeO3 Thin Films by Combining Phase-Field Simulations, TEM, and PFM

2010 ◽  
Vol 16 (S2) ◽  
pp. 318-319
Author(s):  
G Sheng ◽  
JX Zhang ◽  
B Winchester ◽  
PP Wu ◽  
YL Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Field ◽  
Domain Structures ◽  
Bifeo3 Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films

2008 ◽  
Vol 103 (9) ◽  
pp. 094111 ◽  
Author(s):  
J. X. Zhang ◽  
Y. L. Li ◽  
S. Choudhury ◽  
L. Q. Chen ◽  
Y. H. Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ferroelectric Domain ◽  
Domain Structures ◽  
Bifeo3 Thin Films

Characterization of Magnetic and Dielectric Properties on Y-Type Magnetoplumbite Epitaxial thin Films for High Frequency Application

2001 ◽  
Vol 700 ◽  
Author(s):  
K. Ueno ◽  
I. Ohkubo ◽  
Y. Matsumoto ◽  
N. Okazaki ◽  
T. Hasegawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Resonance Frequency ◽  
Magnetic Films ◽  
Bulk Sample ◽  
High Resistivity ◽  
Epitaxial Thin Films ◽  
Domain Structures ◽  
Magnetic Resonance Frequency ◽  
Magnetic And Dielectric Properties

AbstractMagnetic films for miniaturization of planar inductors operating at GHz frequencies require high resistivity and high ferro-magnetic resonance frequency. Y type magnetoplumbite Ba2Co2Fe12O22(Co2Y) is a candidate material to meet such requirements because it has about 10 &m resistivity and resonance frequency higher than 2 GHz. Recently we succeeded in the fabrication of Co2Y epitaxial thin film on MgAl2O4 substrate by combinatorial pulsed laser deposition technique [3]. Here, we report on the magnetic and dielectric properties of this film. The DC resistivity of the film was 7.5 &m. The dielectric constant at 1.25 GHz was measured by a microwave microscope to be 11.0. An easy axis coercive force and saturation magnetization were about 145 Oe and 2000 Gauss respectively, being close to those of bulk sample. Furthermore, the magnetic micro domain structures of Co2Y epitaxial thin films were observed by a scanning SQUID microscope.

Ferroelectric Domain Structures and Piezoelectric Properties of Pb(Zr,Ti)O3 Ceramics

2011 ◽  
Vol 485 ◽  
pp. 3-6
Author(s):  
Naoki Iwaji ◽  
Chiharu Sakaki ◽  
Nobuyuki Wada ◽  
Hiroshi Takagi ◽  
Shigeo Mori
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Boundary ◽  
Piezoelectric Properties ◽  
Ferroelectric Domain ◽  
Strongly Correlated ◽  
Grain Composition ◽  
Pzt Ceramics ◽  
Domain Structures ◽  
Transmission Electron

We investigated domain structures in Pb(Zr,Ti)O3(PZT) ceramics whose composition lies on the morphotropic phase boundary (MPB) using transmission electron microscopy (TEM) and evaluated the piezoelectric properties of PZT. We found that monoclinic nanosized domains (nanodomains), which form in tetragonal domains, strongly correlated with the piezoelectric properties of PZT. The degree of formation of nanodomains depends on the grain composition. Thus, controlling the homogeneity of grain composition in the ceramics is crucial for optimizing the piezoelectric properties of PZT.

Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method

2019 ◽  
Vol 49 (1) ◽  
pp. 127-152 ◽  
Author(s):  
Jian-Jun Wang ◽  
Bo Wang ◽  
Long-Qing Chen
Keyword(s):  
Phase Field ◽  
Domain Switching ◽  
Field Method ◽  
Ferroelectric Domain ◽  
Switching Behavior ◽  
Phase Field Method ◽  
Local Domain ◽  
Mechanical Stimuli ◽  
Structure Property ◽  
Domain Structures

Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.

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