Growing high-quality and high-purity beta-phase gallium oxide thin films

Scilight ◽  
2019 ◽  
Vol 2019 (26) ◽  
pp. 260009
Author(s):  
Meeri Kim
Keyword(s):  
Thin Films ◽  
High Purity ◽  
Gallium Oxide ◽  
Beta Phase ◽  
Oxide Thin Films ◽  
High Quality

High-Quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate

2019 ◽  
Vol 8 (7) ◽  
pp. Q3126-Q3132 ◽  
Author(s):  
Stefan Müller ◽  
Laurenz Thyen ◽  
Daniel Splith ◽  
Anna Reinhardt ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Glass Substrate ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes ◽  
Oxide Thin Films ◽  
High Quality

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality

scholarly journals Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gallium Oxide ◽  
Electronic Transitions ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

2019 ◽  
Vol 216 (20) ◽  
pp. 1900098 ◽  
Author(s):  
Nicholas Blumenschein ◽  
Tania Paskova ◽  
John F. Muth
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Oxide Thin Films ◽  
Growth Pressure ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals Optical constants of titanium-doped gallium oxide thin films

2019 ◽  
Vol 96 ◽  
pp. 109223 ◽  
Author(s):  
Sandeep Manandhar ◽  
Anil K. Battu ◽  
Cristian Orozco ◽  
C.V. Ramana
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Optical Constants ◽  
Oxide Thin Films

Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

Sign in / Sign up

Export Citation Format

Share Document