scholarly journals Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films

APL Materials ◽  
2019 ◽  
Vol 7 (12) ◽  
pp. 120901 ◽  
Author(s):  
Betul Akkopru-Akgun ◽  
Wanlin Zhu ◽  
Clive A. Randall ◽  
Michael T. Lanagan ◽  
Susan Trolier-McKinstry
Keyword(s):  
Electrical Breakdown ◽  
Pzt Films ◽  
Resistance Degradation ◽  
Dc Resistance

Leakage current characteristics and DC resistance degradation mechanisms in Nb doped PZT films

2021 ◽  
Vol 129 (17) ◽  
pp. 174102
Author(s):  
Betul Akkopru-Akgun ◽  
Thorsten J. M. ◽  
Kosuke Tsuji ◽  
Ke Wang ◽  
Clive A. Randall ◽  
...  
Keyword(s):  
Leakage Current ◽  
Degradation Mechanisms ◽  
Pzt Films ◽  
Resistance Degradation ◽  
Current Characteristics ◽  
Dc Resistance

Time dependent dc resistance degradation in lead-based perovskites: 0.7 Pb(Mg1/3Nb2/3)O3−0.3 PbTiO3

2009 ◽  
Vol 105 (5) ◽  
pp. 053705 ◽  
Author(s):  
S. Zhao ◽  
S. J. Zhang ◽  
W. Liu ◽  
N. J. Donnelly ◽  
Z. Xu ◽  
...  
Keyword(s):  
Time Dependent ◽  
Resistance Degradation ◽  
Dc Resistance

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

Elastic and relaxor behavior in nanocrystalline La-modified PZT-films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-125-Pr9-128 ◽  
Author(s):  
M. Marx ◽  
J. K. Krüger ◽  
R. Birringer ◽  
H. Schmitt ◽  
R. Holtwick ◽  
...  
Keyword(s):  
Relaxor Behavior ◽  
Pzt Films

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing

2004 ◽  
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Contact Resistance ◽  
Integrated Circuit ◽  
Electrical Breakdown ◽  
Scanning Electron ◽  
Integrated Circuit Processing

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.

scholarly journals Electrical Breakdown Mechanism of Transformer Oil with Water Impurity: Molecular Dynamics Simulations and First-Principles Calculations

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 123
Author(s):  
Bin Cao ◽  
Ji-Wei Dong ◽  
Ming-He Chi
Keyword(s):  
Molecular Dynamics ◽  
Thermal Diffusion ◽  
First Principles ◽  
Electrical Breakdown ◽  
Transformer Oil ◽  
Water Molecules ◽  
Conducting Channel ◽  
Breakdown Mechanism ◽  
Water Impurity ◽  
Dynamics Simulations

Water impurity is the essential factor of reducing the insulation performance of transformer oil, which directly determines the operating safety and life of a transformer. Molecular dynamics simulations and first-principles electronic-structure calculations are employed to study the diffusion behavior of water molecules and the electrical breakdown mechanism of transformer oil containing water impurities. The molecular dynamics of an oil-water micro-system model demonstrates that the increase of aging acid concentration will exponentially expedite thermal diffusion of water molecules. Density of states (DOS) for a local region model of transformer oil containing water molecules indicates that water molecules can introduce unoccupied localized electron-states with energy levels close to the conduction band minimum of transformer oil, which makes water molecules capable of capturing electrons and transforming them into water ions during thermal diffusion. Subsequently, under a high electric field, water ions collide and impact on oil molecules to break the molecular chain of transformer oil, engendering carbonized components that introduce a conduction electronic-band in the band-gap of oil molecules as a manifestation of forming a conductive region in transformer oil. The conduction channel composed of carbonized components will be eventually formed, connecting two electrodes, with the carbonized components developing rapidly under the impact of water ions, based on which a large number of electron carriers will be produced similar to “avalanche” discharge, leading to an electrical breakdown of transformer oil insulation. The water impurity in oil, as the key factor for forming the carbonized conducting channel, initiates the electric breakdown process of transformer oil, which is dominated by thermal diffusion of water molecules. The increase of aging acid concentration will significantly promote the thermal diffusion of water impurities and the formation of an initial conducting channel, accounting for the degradation in dielectric strength of insulating oil containing water impurities after long-term operation of the transformer.

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