Copper-induced majority charge carrier reversal in bismuth telluride-based nanothermoelectrics

Author(s):  
Niraj Kumar Singh ◽  
Ganpati Ramanath ◽  
Ajay Soni
2017 ◽  
Vol 50 (19) ◽  
pp. 7550-7558 ◽  
Author(s):  
Hee Su Kim ◽  
Gunel Huseynova ◽  
Yong-Young Noh ◽  
Do-Hoon Hwang

2021 ◽  
Vol 11 (2) ◽  
pp. 368-373
Author(s):  
Saeed Fathi ◽  
Elnaz Bagherzadeh-khajehmarjan ◽  
Arash Nikniazi ◽  
Babak Olyaeefar ◽  
Sohrab Ahmadi-kandjani

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 647 ◽  
Author(s):  
Yujun Yao ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Tao Ling ◽  
Chuangchuang Chang ◽  
...  

Traditional hetero-junction perovskite solar cells are composed of light-absorbing layers, charge carrier-transporting layers, and electrodes. Recently, a few papers on homo-junction perovskite solar cells have been studied. Here, we studied the effect of K+ doping on TiO2/PbI2 interface quality, perovskite film morphology, photo-physical properties, and majority carrier type. In particular, the K+ extrinsic doping can modulate the majority carrier type of the perovskite thin film. The study indicated that the interface between the perovskite layer and the TiO2 layer deteriorates with the increase of K+ doping concentration, affecting the electron transport ability from the perovskite film to the TiO2 layer and the photo-physical properties of the perovskite layer by K+ doping. In addition, the majority charge carrier type of perovskite thin films can be changed from n-type to p-type after K+ extrinsic doping, and the corresponding hole concentration increased to 1012 cm−3. This approach of modulating the majority charge carrier type of perovskite thin film will pave the way for the investigation of perovskite homo-junction by extrinsic doping for solar cells.


2019 ◽  
Vol 123 (43) ◽  
pp. 26082-26094
Author(s):  
Yannick K. Gaudy ◽  
Stefan Dilger ◽  
Simone Pokrant ◽  
Sophia Haussener

2012 ◽  
Vol 358 (6-7) ◽  
pp. 1019-1027 ◽  
Author(s):  
Sezhian Annamalai ◽  
Rudra P. Bhatta ◽  
Ian L. Pegg ◽  
Biprodas Dutta

1991 ◽  
Vol 6 (6) ◽  
pp. 1293-1299 ◽  
Author(s):  
Zhitsing Deng ◽  
Michelina Cinquino ◽  
Marcus F. Lawrence

Polycrystalline CdSe and CdTe layers were fabricated by putting liquid Cd in contact with Se or Te vapors under constant Ar flow. The crystalline structure, surface properties, and semiconducting properties of these materials have been determined. Both materials were found to be n-type semiconductors. The results show that, under the proper experimental conditions, the liquid metal-vapor reaction enables the synthesis of polycrystalline CdSe photoelectrodes with a 6.9% energy conversion efficiency when used in an electrochemical photovoltaic cell under 80 mW/cm2 of white light illumination. This efficiency rates amongst the highest ones measured under similar conditions using polycrystalline CdSe. These CdSe layers have a majority charge carrier density of ND = 2.6 × 1017 cm−3 and possess a highly textured surface which is assumed to be mainly responsible for the high photovoltaic efficiency. The highly textured CdTe samples obtained by this process, however, show a photovoltaic conversion efficiency of only 0.2%, and this is seen to be mainly due to their high majority charge carrier density of ND = 7.8 × 1019 cm−3.


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