Morphological, compositional and FT-IR studies in aluminum doped hydrogenated amorphous germanium thin films

1996 ◽  
Author(s):  
G. Marcano ◽  
V. García ◽  
H. Galindo
1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Xu ◽  
Kunji Chen ◽  
Duan Feng ◽  
Seiichi Miyazaki ◽  
Masataka Hirose

AbstractA series of hydrogenated amorphous germanium‐nitrogen (a‐GeN:H) alloys have been synthesized by plasma enhanced chemical vapor deposition. The structure and its thermal stability have been investigated by means of Raman Scattering and Fourier Transform Infrared techniques. It was found that the structure is changed from Ge‐Ge‐like to Ge‐N‐like when the nitrogen content x in a‐Ge1‐xNx:H is larger than 0.3. Some a‐GeN:H alloys were annealed for 30min at different temperature and it is shown that the film structural stability is significantly improved compared with pure a‐Ge:H film.


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