Crystallographic orientation-dependent piezoelectric response in BaTiO3 thin films and the domain evolution under different temperatures

2019 ◽  
Vol 126 (16) ◽  
pp. 164102
Author(s):  
Zhe Zhu ◽  
Chao Li
Keyword(s):  
Thin Films ◽  
Crystallographic Orientation ◽  
Piezoelectric Response ◽  
Domain Evolution ◽  
Different Temperatures

Domain Evolution and Piezoelectric Response across Thermotropic Phase Boundary in (K,Na)NbO3-Based Epitaxial Thin Films

2017 ◽  
Vol 9 (15) ◽  
pp. 13315-13322 ◽  
Author(s):  
Jin Luo ◽  
Wei Sun ◽  
Zhen Zhou ◽  
Yu Bai ◽  
Zhan Jie Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Boundary ◽  
Piezoelectric Response ◽  
Epitaxial Thin Films ◽  
Domain Evolution

Piezoelectric Response and Polarization-Dependent Conductivity of Grain Boundaries in BiFeO3 Thin Films

2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Piezoelectric Response ◽  
Bifeo3 Thin Films

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

2006 ◽  
Vol 45 (6A) ◽  
pp. 5169-5173 ◽  
Author(s):  
Ichiro Ohshima ◽  
Morito Akiyama ◽  
Akira Kakami ◽  
Tatsuo Tabaru ◽  
Toshihiro Kamohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Piezoelectric Response ◽  
Nickel Based Superalloy

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Domain structure and leakage mechanism of BiFeO3 thin films deposited at different temperatures

2014 ◽  
Vol 25 (7) ◽  
pp. 2998-3002 ◽  
Author(s):  
Huiqin Li ◽  
Jingsong Liu ◽  
Qilong Liao ◽  
Wanli Zhang ◽  
Shuren Zhang
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Bifeo3 Thin Films ◽  
Leakage Mechanism ◽  
Different Temperatures

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Domain evolution of tetragonal Pb(ZrxTi1−x) O3 piezoelectric thin films on SrTiO3 (100) surfaces: combined effects of misfit strain and Zr/Ti ratio

2014 ◽  
Vol 2 (29) ◽  
pp. 5836-5841 ◽  
Author(s):  
Qi Yu ◽  
Jing-Feng Li ◽  
Fang-Yuan Zhu ◽  
Jiangyu Li
Keyword(s):  
Thin Films ◽  
Misfit Strain ◽  
Epitaxial Thin Films ◽  
Combined Effects ◽  
Piezoelectric Thin Films ◽  
Domain Evolution ◽  
Ferroelectric Domains ◽  
Substrate Constraint

The ferroelectric domains of tetragonal Pb(ZrxTi1−x)O3 epitaxial thin films have been studied comprehensively to reveal their piezoelectric responses under substrate constraint.

scholarly journals Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

2009 ◽  
Vol 15 (S3) ◽  
pp. 53-54
Author(s):  
Aiying Wu ◽  
P. M. Vilarinho
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Chemical Reactivity ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Metal Alkoxides ◽  
Pzt Thin Films ◽  
Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

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