scholarly journals Modeling of surface gap state passivation and Fermi level de-pinning in solar cells

2019 ◽  
Vol 114 (22) ◽  
pp. 222106 ◽  
Author(s):  
Haichang Lu ◽  
Yuzheng Guo ◽  
Hongfei Li ◽  
John Robertson
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Gap State

scholarly journals On the Relation between the Open‐Circuit Voltage and Quasi‐Fermi Level Splitting in Efficient Perovskite Solar Cells

2019 ◽  
Vol 9 (33) ◽  
pp. 1901631 ◽  
Author(s):  
Pietro Caprioglio ◽  
Martin Stolterfoht ◽  
Christian M. Wolff ◽  
Thomas Unold ◽  
Bernd Rech ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Quasi Fermi Level ◽  
Level Splitting

scholarly journals Ion Movement Explains Huge V OC Increase despite Almost Unchanged Internal Quasi‐Fermi‐Level Splitting in Planar Perovskite Solar Cells

2021 ◽  
pp. 2001104
Author(s):  
Jan Herterich ◽  
Moritz Unmüssig ◽  
Georgios Loukeris ◽  
Markus Kohlstädt ◽  
Uli Würfel
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Perovskite Solar Cells ◽  
Ion Movement ◽  
Quasi Fermi Level ◽  
Level Splitting

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

2005 ◽  
Vol 87 (8) ◽  
pp. 083505 ◽  
Author(s):  
A. Luque ◽  
A. Martí ◽  
N. López ◽  
E. Antolín ◽  
E. Cánovas ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Fermi Level ◽  
Experimental Analysis ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Quasi Fermi Level

Midgap Defects in a-SiGe:H Devices from Capacitance Measurements

1989 ◽  
Vol 149 ◽  
Author(s):  
Steven S. Hegedus ◽  
Theodore X. Zhou
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Density Of States ◽  
Capacitance Measurements

ABSTRACTWe have measured the capacitance of a-SiGe:H p-i-n solar cells as functions of temperature, frequency and bias. The density of states at the Fermi level g(EF) has been determined from two methods. We find that g(EF) increases from 1–2×1016 to 5–10×1017/(cm3eV) as the Ge content increases from 0 to 63%.

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