Design guidelines for on-chip unstable resonator cavity to suppress filamentation in GaSb-based diode lasers

2019 ◽  
Vol 125 (24) ◽  
pp. 243101
Author(s):  
Chi Yang ◽  
Ron Kaspi
Keyword(s):  
Diode Lasers ◽  
Design Guidelines ◽  
Unstable Resonator ◽  
Resonator Cavity ◽  
On Chip

On-chip unstable resonator cavity 2-μm quantum well lasers

2017 ◽  
Author(s):  
Chi Yang ◽  
Alan H. Paxton ◽  
Chunte A. Lu ◽  
Timothy C. Newell ◽  
Ron Kaspi
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity ◽  
On Chip

On-chip unstable resonator cavity GaSb-based quantum well lasers

2017 ◽  
Vol 121 (14) ◽  
pp. 143101 ◽  
Author(s):  
C. Yang ◽  
A. H. Paxton ◽  
T. C. Newell ◽  
C. A. Lu ◽  
R. Kaspi
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity ◽  
On Chip

Network-on-Chip Design Guidelines for Monolithic 3-D Integration

IEEE Micro ◽  
2019 ◽  
Vol 39 (6) ◽  
pp. 46-53
Author(s):  
Itir Akgun ◽  
Dylan Stow ◽  
Yuan Xie
Keyword(s):  
Network On Chip ◽  
Design Guidelines ◽  
Chip Design ◽  
On Chip

ON-CHIP INDUCTORS OPTIMIZATION FOR ULTRA WIDE BAND LOW NOISE AMPLIFIERS

2011 ◽  
Vol 20 (07) ◽  
pp. 1231-1242 ◽  
Author(s):  
J. DEL PINO ◽  
SUNIL L. KHEMCHANDANI ◽  
ROBERTO DÍAZ-ORTEGA ◽  
R. PULIDO ◽  
H. GARCÍA-VÁZQUEZ
Keyword(s):  
Quality Factor ◽  
Noise Figure ◽  
Impedance Matching ◽  
Broad Band ◽  
Wide Band ◽  
Design Guidelines ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Integrated Inductor ◽  
On Chip

In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.

Erratum: Unstable resonator cavity semiconductor lasers [Appl. Phys. Lett. 46, 218 (1985)]

1986 ◽  
Vol 48 (2) ◽  
pp. 198-198
Author(s):  
J. Salzman ◽  
T. Venkatesan ◽  
R. Lang ◽  
M. Mittelstein ◽  
A. Yariv
Keyword(s):  
Semiconductor Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity

scholarly journals Unstable resonator cavity semiconductor lasers

1985 ◽  
Vol 46 (3) ◽  
pp. 218-220 ◽  
Author(s):  
J. Salzman ◽  
T. Venkatesan ◽  
R. Lang ◽  
M. Mittelstein ◽  
A. Yariv
Keyword(s):  
Semiconductor Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity
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