On-chip unstable resonator cavity GaSb-based quantum well lasers

2017 ◽  
Vol 121 (14) ◽  
pp. 143101 ◽  
Author(s):  
C. Yang ◽  
A. H. Paxton ◽  
T. C. Newell ◽  
C. A. Lu ◽  
R. Kaspi
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity ◽  
On Chip

On-chip unstable resonator cavity 2-μm quantum well lasers

2017 ◽  
Author(s):  
Chi Yang ◽  
Alan H. Paxton ◽  
Chunte A. Lu ◽  
Timothy C. Newell ◽  
Ron Kaspi
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Unstable Resonator ◽  
Resonator Cavity ◽  
On Chip

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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