Strain effect on thermoelectric properties of SrRuO3 epitaxial thin films

2019 ◽  
Vol 115 (2) ◽  
pp. 022403 ◽  
Author(s):  
Daisuke Kan ◽  
Yuichi Shimakawa
2005 ◽  
Vol 86 (11) ◽  
pp. 112513 ◽  
Author(s):  
Yasushi Ogimoto ◽  
Naoko Takubo ◽  
Masao Nakamura ◽  
Hiroharu Tamaru ◽  
Makoto Izumi ◽  
...  

2020 ◽  
Vol 8 (38) ◽  
pp. 19975-19983
Author(s):  
Arindom Chatterjee ◽  
Emigdio Chavez-Angel ◽  
Belén Ballesteros ◽  
José Manuel Caicedo ◽  
Jessica Padilla-Pantoja ◽  
...  

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).


2006 ◽  
Vol 99 (9) ◽  
pp. 093704 ◽  
Author(s):  
Akihiro Sakai ◽  
Tsutomu Kanno ◽  
Satoshi Yotsuhashi ◽  
Satoshi Okada ◽  
Hideaki Adachi

1997 ◽  
Vol 494 ◽  
Author(s):  
Q. Gan ◽  
R. A. Rao ◽  
J. L. Garrett ◽  
Mark Lee ◽  
C. B. Eom

ABSTRACTWe report the direct measurement of elastic strain effect on the electrical and magnetic properties of single domain epitaxial SrRuO3 thin films, using a lift-off technique. The as-grown films on vicinal (001) SrTiO3 substrates are subjected to elastic biaxial compressive strain within the plane and tensile strain normal to the plane. In contrast, the lift-off films prepared by chemical etching of SrTiO3 substrates, are completely strain free with bulk like lattice. Our measurements indicate that the elastic strain can significantly affect the electrical and magnetic properties of epitaxial ferromagnetic SrRuO3 thin films. For the strained films, the Curie temperature (Tc) was suppressed to 150K and the saturation magnetic moment (Ms) was decreased to 1.15μB/Ru atom as compared to a Tc of 160K and Ms of 1.45μB/Ru atom for the strain free films. These property changes are attributed to the structural distortion due to the elastic strain in the as-grown epitaxial thin films. Our results provide direct evidence of the crucial role of lattice strain in determining the properties of the perovskite epitaxial thin films.


2001 ◽  
Vol 691 ◽  
Author(s):  
Mildred S. Dresselhaus ◽  
Gene Dresselhaus ◽  
Elena I. Rogacheva ◽  
Tatyana V. Tavrina ◽  
Sergey N. Grigorov ◽  
...  

ABSTRACTSystematic investigations were performed of the thickness dependences of the thermoelectric properties of PbSe thin films, freshly prepared and exposed to air at room temperature. It is shown that oxidation leads to a sharp change in the thermoelectric properties of the PbSe films including a change in the sign of the dominant carrier type from n-type to p- type at d ≤ 80 nm. Using a two carrier model for thin films (d < 50 nm) and a two-layer model for thick films (d > 50 nm) allows us to give a satisfactory qualitative interpretation of the observed experimental dependences of the thermoelectric properties on the film thickness.


2008 ◽  
Vol 10 (4) ◽  
pp. 502-507 ◽  
Author(s):  
Rosa Robert ◽  
Myriam H. Aguirre ◽  
Laura Bocher ◽  
Matthias Trottmann ◽  
Sebastian Heiroth ◽  
...  

2001 ◽  
Vol 32 (1) ◽  
pp. 62-65 ◽  
Author(s):  
Jun Zhang ◽  
Hidekazu Tanaka ◽  
Teruo Kanki ◽  
Tomoji Kawai

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