Effects of gas cluster ion beam sputtering on the molecular orientation of organic semiconductor films: Ultraviolet photoelectron spectroscopy study of [6]phenacene

2019 ◽  
Vol 114 (23) ◽  
pp. 231603
Author(s):  
Ryoji Arai ◽  
Toshio Nishi ◽  
Yoshihiro Kudo ◽  
Hiroyuki Yoshida ◽  
Shigetaka Tomiya
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Orientation ◽  
Ion Beam ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Semiconductor Films ◽  
Spectroscopy Study ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering

2020 ◽  
Vol 514 ◽  
pp. 145903 ◽  
Author(s):  
O. Romanyuk ◽  
I. Gordeev ◽  
A. Paszuk ◽  
O. Supplie ◽  
J.P. Stoeckmann ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Interface Study

X-ray Photoelectron Spectroscopy Study of Diamond-Like Carbon Thin Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

2008 ◽  
Vol 47 (5) ◽  
pp. 3380-3383 ◽  
Author(s):  
Yuichi Haruyama ◽  
Teruyuki Kitagawa ◽  
Kazuhiro Kanda ◽  
Shinji Matsui ◽  
Tatsuo Gejo ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion ◽  
Carbon Thin Films ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

RSC Advances ◽  
2015 ◽  
Vol 5 (95) ◽  
pp. 77814-77822 ◽  
Author(s):  
Dong-Jin Yun ◽  
Taeho Shin ◽  
SungJun Park ◽  
Youngsik Shin ◽  
YongKoo Kyung ◽  
...  
Keyword(s):  
Energy Level ◽  
Organic Semiconductor ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Level Control ◽  
Beam Sputtering ◽  
Cluster Ion ◽  
Semiconductor Electrode ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.

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