Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

2019 ◽  
Vol 125 (20) ◽  
pp. 205107
Author(s):  
X. Wang ◽  
L. Tsybeskov ◽  
T. I. Kamins ◽  
X. Wu ◽  
D. J. Lockwood
Keyword(s):  
Structural Properties ◽  
Silicon Germanium ◽  
Carrier Transport ◽  
Nanowire Heterojunctions

Influence of alloy composition on carrier transport and solar cell properties of hydrogenated microcrystalline silicon-germanium thin films

2006 ◽  
Vol 89 (14) ◽  
pp. 142115 ◽  
Author(s):  
Takuya Matsui ◽  
Michio Kondo ◽  
Keisuke Ogata ◽  
Tsuyoshi Ozawa ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Carrier Transport ◽  
Alloy Composition ◽  
Microcrystalline Silicon

scholarly journals Structural and optical properties of axial silicon-germanium nanowire heterojunctions

2015 ◽  
Vol 118 (23) ◽  
pp. 234301 ◽  
Author(s):  
X. Wang ◽  
L. Tsybeskov ◽  
T. I. Kamins ◽  
X. Wu ◽  
D. J. Lockwood
Keyword(s):  
Optical Properties ◽  
Silicon Germanium ◽  
Structural And Optical Properties ◽  
Nanowire Heterojunctions

Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films

2010 ◽  
Vol 638-642 ◽  
pp. 2891-2896
Author(s):  
P.C. Chang ◽  
K.H. Lee ◽  
A.N. Tu ◽  
S.J. Chang ◽  
K.L. Lee
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Carrier Transport ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

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