Determination of junction depth in ion implanted millimeter wave (MMW)-transit time devices by a modified three moment approach

2019 ◽  
Author(s):  
Niratyay Biswas ◽  
Moumita Mukherjee ◽  
Sayan Chatterjee
Keyword(s):  
Millimeter Wave ◽  
Transit Time ◽  
Junction Depth ◽  
Moment Approach ◽  
Ion Implanted

scholarly journals Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy

2010 ◽  
Vol 18 (25) ◽  
pp. 26206 ◽  
Author(s):  
Rainer Jacob ◽  
Stephan Winnerl ◽  
Harald Schneider ◽  
Manfred Helm ◽  
Marc Tobias Wenzel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantitative Determination ◽  
Carrier Concentration ◽  
Near Field ◽  
Charge Carrier Concentration ◽  
Field Spectroscopy ◽  
Ion Implanted

Damage profile determination of ion‐implanted Si layers by ellipsometry

1980 ◽  
Vol 51 (8) ◽  
pp. 4125-4129 ◽  
Author(s):  
T. Motooka ◽  
K. Watanabe
Keyword(s):  
Ion Implanted

scholarly journals Determination of thermal and optical properties of ion implanted polyetheretherketone films by photothermal spectroscopies

2007 ◽  
Vol 101 (5) ◽  
pp. 054506 ◽  
Author(s):  
J. E. de Albuquerque ◽  
E. Tavenner ◽  
M. Curry ◽  
R. E. Giedd ◽  
P. Meredith
Keyword(s):  
Optical Properties ◽  
Ion Implanted
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