scholarly journals Subthreshold electron transport properties of ultrathin film phase change material Ge2Sb2Te5

AIP Advances ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 055120 ◽  
Author(s):  
Ali Roohforouz ◽  
Aliasghar Shokri
Keyword(s):  
Electron Transport ◽  
Phase Change ◽  
Transport Properties ◽  
Phase Change Material ◽  
Ultrathin Film ◽  
Electron Transport Properties ◽  
Change Material

Ab Initio Study of the Sub-threshold Electron Transport Properties of Ultra-scaled Amorphous Phase Change Material Germanium Telluride

2014 ◽  
Vol 1697 ◽  
Author(s):  
Jie Liu ◽  
Xu Xu ◽  
M. P. Anantram
Keyword(s):  
Electron Transport ◽  
Ab Initio ◽  
Transport Properties ◽  
Defect States ◽  
Germanium Telluride ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Electron Transport Properties ◽  
Change Material

ABSTRACTThe sub-threshold electron transport properties of amorphous (a-) germanium telluride (GeTe) phase change material (PCM) ultra-thin films are investigated by using ab initio molecular dynamics, density function theory, and Green’s function simulations. The simulation results reproduce the trends in measured electron transport properties, e.g. current-voltage curve, intra-bandgap donor-like and acceptor-like defect states, and p-type conductivity. The underlying physical mechanism of electron transport in ultra-scaled a-PCM is unraveled. We find that, though the current-voltage curve of the ultra-scaled a-PCM resembles that of the bulk a-PCM, their physical origins are different. Unlike the electron transport in bulk a-PCM, which is governed by the Poole-Frenkel effect, the electron transport in ultra-scaled a-PCM is largely dominated by tunneling transport via intra-bandgap donor-like and acceptor-like defect states.

Role of Inelastic Electron-Phonon Scattering in Ultra-Scaled Phase Change Material Nanostructures

2014 ◽  
Vol 1697 ◽  
Author(s):  
Jie Liu ◽  
Xu Xu ◽  
M. P. Anantram
Keyword(s):  
Electron Transport ◽  
Phase Change ◽  
Phase Change Material ◽  
Phonon Scattering ◽  
Channel Length ◽  
Inelastic Electron ◽  
Atomic Lattice ◽  
Current Voltage Curve ◽  
Change Material ◽  
Electron Phonon Scattering

ABSTRACTThe electron transport properties of ultra-scaled amorphous phase change material (PCM) GeTe are studied using non-equilibrium Green’s function (NEGF). The inelastic electron-phonon scattering is included using Born approximation. It is shown that, in ultra-scaled PCM device with 6 nm channel length, less than 4% of the energy carried by the incident electrons from the source is transferred to the atomic lattice before reaching the drain, indicating that the electron transport is largely elastic. Our simulation results show that the inelastic electron-phonon scattering, which plays an important role to excite trapped electrons in bulk PCM devices, exerts very limited influence on the current density value and the shape of current-voltage curve of ultra-scaled PCM devices. The analysis reveals that the Poole-Frenkel law and the Ohm’s law, which are the governing physical mechanisms of the bulk PCM devices, cease to be valid in the ultra-scaled PCM devices.

NUMERICAL STUDY OF A SOLAR GREENHOUSE DRYER WITH A PHASE-CHANGE MATERIAL AS AN ENERGY STORAGE MEDIUM

2018 ◽  
Vol 49 (6) ◽  
pp. 509-528 ◽  
Author(s):  
Orawan Aumporn ◽  
Belkacem Zeghmati ◽  
Xavier Chesneau ◽  
Serm Janjai
Keyword(s):  
Energy Storage ◽  
Phase Change ◽  
Phase Change Material ◽  
Numerical Study ◽  
Storage Medium ◽  
Solar Greenhouse ◽  
Change Material
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