scholarly journals Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045110 ◽  
Author(s):  
Shota Nunomura ◽  
Isao Sakata ◽  
Koji Matsubara
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Electronic Defects

scholarly journals Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

2011 ◽  
Vol 99 (12) ◽  
pp. 123506 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
Stefaan De Wolf ◽  
B. Strahm ◽  
D. Lachenal ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Passivation ◽  
Silicon Interface

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

2004 ◽  
Vol 84 (9) ◽  
pp. 1474-1476 ◽  
Author(s):  
I. Martı́n ◽  
M. Vetter ◽  
A. Orpella ◽  
C. Voz ◽  
J. Puigdollers ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Silicon Surface Passivation

Investigation of Crystalline Silicon Surface Treatments in Amorphous – Crystalline Heterojunction Via Capacitance Measurements

2000 ◽  
Vol 609 ◽  
Author(s):  
M. Tucci ◽  
R. De Rosa ◽  
F. Roca ◽  
D. Caputo ◽  
F. Palma
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Capacitance Measurement ◽  
Technological Parameters ◽  
Solar Cell Application ◽  
Treatment Type ◽  
Wide Range ◽  
Crystalline Surface

ABSTRACTIn this work we investigate the density of states at amorphous-crystalline silicon interface that play the key role in the heterostructure solar cell application. In particular we analyzed the defect density arising from plasma treatment of the crystalline surface. This process is useful to clean the crystalline surface, but greatly influenced the electrical properties of the device. We used low temperature (20K-300K) capacitance measurement performed in a wide range of frequency of signal probe (1Hz-10kHz). Differences in the capacitance profile between samples with various plasma dry treatments indicate different defect density profile at interface. With the aid of a finite difference model of the capacitance as a function of temperature and frequency we extract information from the measurements about the defect energy distribution at interface. As a result, the density and the nature of defects at interface will be correlated to the technological parameters as: wafer cleaning procedure, hydrogen plasma treatment, type and concentration of dopants at interface.

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