Transient phase transitions in single-crystal coppers under ultrafast lasers induced shock compression: A molecular dynamics study

2019 ◽  
Vol 125 (19) ◽  
pp. 194302 ◽  
Author(s):  
Qi-lin Xiong ◽  
Takayuki Kitamura ◽  
Zhenhuan Li
Keyword(s):  
Molecular Dynamics ◽  
Phase Transitions ◽  
Single Crystal ◽  
Shock Compression ◽  
Ultrafast Lasers ◽  
Transient Phase

A reactive molecular dynamics study on the anisotropic sensitivity in single crystal α-cyclotetramethylene tetranitramine

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8609-8621 ◽  
Author(s):  
Ting-Ting Zhou ◽  
Yan-Geng Zhang ◽  
Jian-Feng Lou ◽  
Hua-Jie Song ◽  
Feng-Lei Huang
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
Shock Compression ◽  
Slip Plane ◽  
Reactive Molecular Dynamics ◽  
Cyclotetramethylene Tetranitramine

Anisotropic sensitivity is related to the different intermolecular steric arrangements across the slip plane induced by shock compression along various orientations.

Anisotropic shock sensitivity in a single crystal δ-cyclotetramethylene tetranitramine: a reactive molecular dynamics study

2015 ◽  
Vol 17 (12) ◽  
pp. 7924-7935 ◽  
Author(s):  
Ting-Ting Zhou ◽  
Jian-Feng Lou ◽  
Hua-Jie Song ◽  
Feng-Lei Huang
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
Shock Compression ◽  
Slip Plane ◽  
Reactive Molecular Dynamics ◽  
Shock Sensitivity ◽  
Cyclotetramethylene Tetranitramine

Anisotropic sensitivity is related to different intermolecular steric arrangements across the slip plane induced by shock compression along various orientations.

Complex structure and Mössbauer effect observed in the course of phase transitions in PbZr0.72Sn0.28O3 single crystal

2020 ◽  
Vol 153 (22) ◽  
pp. 224202
Author(s):  
Irena Jankowska-Sumara ◽  
Mariola Kądziołka-Gaweł ◽  
Maria Podgórna ◽  
Andrzej Majchrowski ◽  
Krystian Roleder
Keyword(s):  
Phase Transitions ◽  
Single Crystal ◽  
Mössbauer Effect ◽  
Complex Structure ◽  
Mossbauer Effect

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

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