scholarly journals Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

2019 ◽  
Vol 125 (20) ◽  
pp. 203104 ◽  
Author(s):  
Henryk Turski ◽  
Shyam Bharadwaj ◽  
Huili (Grace) Xing ◽  
Debdeep Jena
Keyword(s):  
Quantum Well ◽  
Tunnel Junctions ◽  
Light Emitters ◽  
Polarization Control

scholarly journals Long-Range Phase Coherence in Double-Barrier Magnetic Tunnel Junctions with a Large Thick Metallic Quantum Well

2015 ◽  
Vol 115 (15) ◽  
Author(s):  
B. S. Tao ◽  
H. X. Yang ◽  
Y. L. Zuo ◽  
X. Devaux ◽  
G. Lengaigne ◽  
...  
Keyword(s):  
Quantum Well ◽  
Long Range ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Phase Coherence ◽  
Double Barrier

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

2012 ◽  
Vol 111 (10) ◽  
pp. 103113 ◽  
Author(s):  
Mikhail V. Kisin ◽  
Chih-Li Chuang ◽  
Hussein S. El-Ghoroury
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Light Emitters ◽  
Non Equilibrium

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

Nanoscale ◽  
2016 ◽  
Vol 8 (36) ◽  
pp. 16340-16348 ◽  
Author(s):  
Ahmed Fadil ◽  
Yiyu Ou ◽  
Daisuke Iida ◽  
Satoshi Kamiyama ◽  
Paul Michael Petersen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Extraction ◽  
Light Emitters

Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells

2012 ◽  
Vol 100 (21) ◽  
pp. 213907 ◽  
Author(s):  
Matthew P. Lumb ◽  
Michael K. Yakes ◽  
María González ◽  
Igor Vurgaftman ◽  
Christopher G. Bailey ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Tunnel Junctions ◽  
High Peak ◽  
Double Quantum ◽  
Double Quantum Well

scholarly journals Fractal quantum well heterostructures for broadband light emitters

1995 ◽  
Author(s):  
Mary H. Crawford ◽  
Paul L. Gourley ◽  
Ken E. Meissner ◽  
Michael B. Sinclair ◽  
Eric D. Jones ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitters
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