Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

Nanoscale ◽  
2016 ◽  
Vol 8 (36) ◽  
pp. 16340-16348 ◽  
Author(s):  
Ahmed Fadil ◽  
Yiyu Ou ◽  
Daisuke Iida ◽  
Satoshi Kamiyama ◽  
Paul Michael Petersen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Extraction ◽  
Light Emitters

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

2012 ◽  
Vol 111 (10) ◽  
pp. 103113 ◽  
Author(s):  
Mikhail V. Kisin ◽  
Chih-Li Chuang ◽  
Hussein S. El-Ghoroury
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Light Emitters ◽  
Non Equilibrium

scholarly journals Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring

2017 ◽  
Vol 25 (14) ◽  
pp. 15778 ◽  
Author(s):  
Christopher D. Pynn ◽  
Lesley Chan ◽  
Federico Lora Gonzalez ◽  
Alex Berry ◽  
David Hwang ◽  
...  
Keyword(s):  
Light Extraction ◽  
Light Emitters ◽  
Free Standing ◽  
Surface Structuring

scholarly journals Fractal quantum well heterostructures for broadband light emitters

1995 ◽  
Author(s):  
Mary H. Crawford ◽  
Paul L. Gourley ◽  
Ken E. Meissner ◽  
Michael B. Sinclair ◽  
Eric D. Jones ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitters

scholarly journals Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

2019 ◽  
Vol 125 (20) ◽  
pp. 203104 ◽  
Author(s):  
Henryk Turski ◽  
Shyam Bharadwaj ◽  
Huili (Grace) Xing ◽  
Debdeep Jena
Keyword(s):  
Quantum Well ◽  
Tunnel Junctions ◽  
Light Emitters ◽  
Polarization Control

Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters

1999 ◽  
Vol 573 ◽  
Author(s):  
D. G. Deppe ◽  
D. L. Huffaker ◽  
L. A. Graham ◽  
Z. Zou ◽  
S. Csutak
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Selective Oxidation ◽  
Threshold Current ◽  
Cavity Surface ◽  
Light Emitters ◽  
High Q ◽  
Fabry Perot ◽  
Low Threshold ◽  
Emitting Lasers

ABSTRACTSelective oxidation of AlAs (or AlGaAs) can be used to form buried, low refractive index apertures within high Q Fabry-Perot microcavities. These apertures provide electrical and optical confinement, and for vertical-cavity surface-emitting lasers (VCSELs) have resulted in ultra-low threshold room temperature lasing with threshold currents under 25 μA. When used with quantum dot light emitters, the oxide-apertured microcavity can also be used to control the spontaneous lifetime. We describe the microcavity fabrication based on high Q Fabry-Perot microcavities and selective oxidation, and design and cavity Q constraints for apertured microcavities for quantum well and quantum dot VCSELs and microcavity LEDs. Threshold current densities of quantum well VCSELs are as low as 98 A/cm2, while ground state lasing is also obtained for quantum dot VCSELs. Our initial experiments on microcavities with very small apertures and quantum dot emitters demonstrate up to a factor of 2.3 increase in the spontaneous emission rate.

Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

2015 ◽  
Vol 212 (5) ◽  
pp. 925-929 ◽  
Author(s):  
Tongxing Yan ◽  
Juan He ◽  
Wei Yang ◽  
Kamran Rajabi ◽  
Weihua Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitters ◽  
Quantum Well Structure
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