Internal photoemission spectroscopy determination of barrier heights between Ta-based amorphous metals and atomic layer deposited insulators

2019 ◽  
Vol 125 (5) ◽  
pp. 055301 ◽  
Author(s):  
M. A. Jenkins ◽  
J. M. McGlone ◽  
J. F. Wager ◽  
J. F. Conley
Keyword(s):  
Atomic Layer ◽  
Photoemission Spectroscopy ◽  
Amorphous Metals ◽  
Internal Photoemission ◽  
Barrier Heights

Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2and Ta-Based Amorphous Metals

2018 ◽  
Vol 85 (13) ◽  
pp. 729-734 ◽  
Author(s):  
Melanie A. Jenkins ◽  
Tyler Klarr ◽  
John M. McGlone ◽  
John F. Wager ◽  
John F. Conley
Keyword(s):  
Energy Barrier ◽  
Photoemission Spectroscopy ◽  
Amorphous Metals ◽  
Internal Photoemission ◽  
Barrier Heights

Internal Photoemission Measurements for the Determination of Schottky Barrier Height on a-Si, Ge:H, F Alloys

1986 ◽  
Vol 70 ◽  
Author(s):  
V. Chu ◽  
S. Aljishi ◽  
D. Slobodin ◽  
S. Wagner
Keyword(s):  
Glow Discharge ◽  
Schottky Barrier ◽  
Entire Range ◽  
Schottky Barrier Height ◽  
Alloy Composition ◽  
Similar Increase ◽  
Internal Photoemission ◽  
Barrier Heights ◽  
Optical Gap

ABSTRACTWe report measurements of internal photoemission from Ni, Au, and Pd contacts into a-Si, Ge:H, F alloys. The alloys were prepared by d.c. glow discharge decomposition of either SiF4 or SiH4 and GeF4, and H2. The sharp exponential drop in subgap absorption in these alloys, measured by the Constant Photocurrent Method (CPM), allows the determination of barrier heights using internal photoemission thresholds. The barrier heights of Ni, Au and Pd contacts are presented as a function of alloy composition. We find Ni has the lowest barrier heights while Au shows the highest barrier heights over the entire range of Eopt. We also find that for the Ni and Au contacts, ΦB varies as 1/2 the optical gap. In the case of Pd, ΦB shows a dependence of 1/3 the optical gap. We observed an increase in ΦB for Pd contacts when etched with a diluted HF solution prior to metallization. A similar increase in ΦD was not observed for the Au and Ni contacts.

Band offset determination of atomic-layer-deposited Al2O3and HfO2on InP by internal photoemission and spectroscopic ellipsometry

2013 ◽  
Vol 113 (2) ◽  
pp. 024504 ◽  
Author(s):  
K. Xu ◽  
H. Sio ◽  
O. A. Kirillov ◽  
L. Dong ◽  
M. Xu ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Band Offset ◽  
Internal Photoemission

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy

2021 ◽  
Vol 13 (12) ◽  
pp. 14634-14643
Author(s):  
Melanie A. Jenkins ◽  
Konner E. K. Holden ◽  
Sean W. Smith ◽  
Michael T. Brumbach ◽  
M. David Henry ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Internal Photoemission ◽  
Band Alignments

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

2012 ◽  
Vol 101 (2) ◽  
pp. 022105 ◽  
Author(s):  
Rusen Yan ◽  
Qin Zhang ◽  
Wei Li ◽  
Irene Calizo ◽  
Tian Shen ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

2013 ◽  
Vol 43 (4) ◽  
pp. 828-832 ◽  
Author(s):  
Zeng Zhang ◽  
Christine M. Jackson ◽  
Aaron R. Arehart ◽  
Brian McSkimming ◽  
James S. Speck ◽  
...  
Keyword(s):  
Energy Band ◽  
Direct Determination ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Band Alignments ◽  
Mos Structures

scholarly journals The Degree of Oxidation of Graphene Oxide

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 560
Author(s):  
Alexandra Carvalho ◽  
Mariana C. F. Costa ◽  
Valeria S. Marangoni ◽  
Pei Rou Ng ◽  
Thi Le Hang Nguyen ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Ab Initio ◽  
State Of The Art ◽  
High Accuracy ◽  
Precise Determination ◽  
Photoemission Spectroscopy ◽  
Pristine Graphene ◽  
X Ray ◽  
Degree Of Oxidation

We show that the degree of oxidation of graphene oxide (GO) can be obtained by using a combination of state-of-the-art ab initio computational modeling and X-ray photoemission spectroscopy (XPS). We show that the shift of the XPS C1s peak relative to pristine graphene, ΔEC1s, can be described with high accuracy by ΔEC1s=A(cO−cl)2+E0, where c0 is the oxygen concentration, A=52.3 eV, cl=0.122, and E0=1.22 eV. Our results demonstrate a precise determination of the oxygen content of GO samples.

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