Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

2012 ◽  
Vol 101 (2) ◽  
pp. 022105 ◽  
Author(s):  
Rusen Yan ◽  
Qin Zhang ◽  
Wei Li ◽  
Irene Calizo ◽  
Tian Shen ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission

Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

2012 ◽  
Vol 100 (10) ◽  
pp. 102104 ◽  
Author(s):  
Qin Zhang ◽  
Guangle Zhou ◽  
Huili G. Xing ◽  
Alan C. Seabaugh ◽  
Kun Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

2014 ◽  
Vol 2014 ◽  
pp. 1-30 ◽  
Author(s):  
Valeri V. Afanas'ev
Keyword(s):  
Valence Band ◽  
High Mobility ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Light Elements ◽  
Bandgap Width ◽  
Electron Band ◽  
Internal Photoemission ◽  
Wide Gap ◽  
Photoemission Study

Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge,Si1-xGex,Ge1-xSnx) andAIIIBVgroup (GaAs,InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy

2021 ◽  
Vol 13 (12) ◽  
pp. 14634-14643
Author(s):  
Melanie A. Jenkins ◽  
Konner E. K. Holden ◽  
Sean W. Smith ◽  
Michael T. Brumbach ◽  
M. David Henry ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Internal Photoemission ◽  
Band Alignments

scholarly journals Energy Band Alignment of Few-Monolayer WS2 and WSe2 with SiO2 Using Internal Photoemission Spectroscopy

2020 ◽  
Vol 9 (9) ◽  
pp. 093009
Author(s):  
Gilles Delie ◽  
Peter M. Litwin ◽  
Stephen J. McDonnell ◽  
Daniele Chiappe ◽  
Michel Houssa ◽  
...  
Keyword(s):  
Energy Band ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

2013 ◽  
Vol 43 (4) ◽  
pp. 828-832 ◽  
Author(s):  
Zeng Zhang ◽  
Christine M. Jackson ◽  
Aaron R. Arehart ◽  
Brian McSkimming ◽  
James S. Speck ◽  
...  
Keyword(s):  
Energy Band ◽  
Direct Determination ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Band Alignments ◽  
Mos Structures
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