scholarly journals Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon

APL Materials ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 022520 ◽  
Author(s):  
Zhe Wang ◽  
Hanjong Paik ◽  
Zhen Chen ◽  
David A. Muller ◽  
Darrell G. Schlom
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
La Doped

scholarly journals High mobility transparent and conducting oxide films of La-doped SrSnO3

2021 ◽  
Author(s):  
Yogesh Kumar ◽  
Ravi Kumar ◽  
K Asokan ◽  
R J Choudhary ◽  
D M Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
High Mobility ◽  
X Ray ◽  
Carrier Effective Mass ◽  
Heterostructure Devices ◽  
X Ray Absorption ◽  
La Doped

Abstract The synthesis and characterization of high mobility thin films of La-doped SrSnO 3 are reported. The mobility for the 7% La-doped sample is found to be 228 cm 2 V -1 s -1 . The observed high mobility is associated with the reduced carrier effective mass and scattering centers of various scattering mechanisms. The enhancement in mobility and the increase in carrier concentration after doping reduced the resistivities of the thin films by 5 orders of magnitude. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy revealed that La-dopant and oxygen vacancies donate the electrons in the films. Films were highly transparent (> 90%) in the visible region. These materials have great potential to be used in the optoelectronic and heterostructure devices.

The role of intermediate S-polymorph towards high piezoelectricity in La-doped BiFeO3 epitaxial thin films

2021 ◽  
Vol 207 ◽  
pp. 116683
Author(s):  
Jun Young Lee ◽  
Gopinathan Anoop ◽  
Sanjith Unithrattil ◽  
WooJun Seol ◽  
Youngki Yeo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
La Doped

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method

2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
La Doped

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

Characterization of epitaxial thin films of Bi2VO5.5 on La-doped SrTiO3 substrates prepared by coating-pyrolysis process

2002 ◽  
Vol 422 (1-2) ◽  
pp. 73-79 ◽  
Author(s):  
Kenichi Tsukada ◽  
Tsutomu Nagahama ◽  
Mitsugu Sohma ◽  
Iwao Yamaguchi ◽  
Takaaki Manabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Pyrolysis Process ◽  
La Doped

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

The Study of Ferroelectric La-Doped PbTiO3 Thin Films Prepared by RF Magnetron Sputtering

2003 ◽  
Vol 52 (1) ◽  
pp. 223-228 ◽  
Author(s):  
Chengtao Yang ◽  
Shuren Zhang ◽  
Jingsong Liu ◽  
Menqiang Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
La Doped

scholarly journals Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron

2021 ◽  
Author(s):  
Norihiro Shimoi
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
High Mobility ◽  
Zno Thin Films ◽  
Reaction Field ◽  
Wet Process ◽  
Interface Control ◽  
Zno Particles ◽  
Pet Film ◽  
Non Equilibrium

In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.

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