Realization of rhombohedral, mixed, and tetragonal like phases of BiFeO3 and ferroelectric domain engineering using a strain tuning layer on LaAlO3(001) substrate

2019 ◽  
Vol 125 (1) ◽  
pp. 012501 ◽  
Author(s):  
M. M. Saj Mohan ◽  
Soumya Bandyopadhyay ◽  
Tushar Jogi ◽  
Saswata Bhattacharya ◽  
Ranjith Ramadurai
Keyword(s):  
Ferroelectric Domain ◽  
Domain Engineering

Light-mediated ferroelectric domain engineering and micro-structuring of lithium niobate crystals

2011 ◽  
Vol 6 (4) ◽  
pp. 526-548 ◽  
Author(s):  
C.Y.J. Ying ◽  
A.C. Muir ◽  
C.E. Valdivia ◽  
H. Steigerwald ◽  
C.L. Sones ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Micro Structuring ◽  
Lithium Niobate Crystals

Ferroelectric domain engineering of lithium niobate single crystal confined in glass

2019 ◽  
Vol 9 (01) ◽  
pp. 334-339 ◽  
Author(s):  
Keith Veenhuizen ◽  
Sean McAnany ◽  
Rama Vasudevan ◽  
Daniel Nolan ◽  
Bruce Aitken ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Single Crystal ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Lithium Niobate Single Crystal ◽  
Image Position

Abstract

Probing Ferroelectric Domain Engineering in BiFeO3Thin Films by Second Harmonic Generation

2015 ◽  
Vol 27 (33) ◽  
pp. 4871-4876 ◽  
Author(s):  
Morgan Trassin ◽  
Gabriele De Luca ◽  
Sebastian Manz ◽  
Manfred Fiebig
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Ferroelectric Domain ◽  
Domain Engineering

scholarly journals Ferroelectric domain engineering by focused infrared femtosecond pulses

2015 ◽  
Vol 107 (14) ◽  
pp. 141102 ◽  
Author(s):  
Xin Chen ◽  
Pawel Karpinski ◽  
Vladlen Shvedov ◽  
Kaloian Koynov ◽  
Bingxia Wang ◽  
...  
Keyword(s):  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Femtosecond Pulses

Direct-Write E-beam Submicron Domain Engineering in LiNbO3 Thin Films Grown by Liquid Phase Epitaxy

2003 ◽  
Vol 784 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Liquid Phase ◽  
Domain Structure ◽  
Liquid Phase Epitaxy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Direct Write ◽  
Composition Effects ◽  
Domain Structures

ABSTRACTWe demonstrate submicron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO3 thin films grown on LiNbO3 and LiTaO3 substrates using a direct-write electron beam poling for waveguide applications. LiNbO3 thin films of several-micron thickness were grown using a flux melt of 20 mol% LiNbO3-80 mol% LiVO3. To engineer domain structures in Z- oriented LPE LiNbO3 films, a direct-write electron beam poling was implemented. It is shown that we can engineer the domain structure of LPE LiNbO3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are opposite. We also compared e-beam poling behavior in a congruent LiNbO3 single crystal and a LPE LiNbO3 film. Using the same e-beam scan parameters, a much enhanced domain structure is obtained in LPE films. Defect structure and composition effects are also discussed.

Ferroelectric Domain Engineering in Stoichiometric LiNbO3 by Scanning Probe Microscopy

2012 ◽  
Vol 485 ◽  
pp. 510-513
Author(s):  
Hui Feng Bo ◽  
Zhan Xin Zhang ◽  
Hong Kui Hu ◽  
Ru Zheng Wang
Keyword(s):  
Lithium Niobate ◽  
Scanning Probe Microscopy ◽  
Pulse Width ◽  
Scanning Force Microscopy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Scanning Probe ◽  
Feature Size ◽  
Force Microscopy ◽  
Scanning Force

Scanning force microscopy is used to investigate nanoscale ferroelectric domain engineering in near-stoichiometric lithium niobate (SLN) single crystals. The topography of the SLN single crystal was studied after polished to about 10 micron thickness. Dot patterns of the domain structure were fabricated by applying positive DC voltages of magnitude form 80 to 100 V with different pulse width from 0.5 to 20 s. The dot nanodomains of radius down to 200 nm were fabricated. With the increase of the magnitude of voltage and pulse width, feature size of switched domains increased to 940 nm.

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