Effects of e-Beam Parameters on Sub-micron Ferroelectric Domain Engineering in Liquid Phase Epitaxy LiNbO3 by Direct - Write e – Beam

2005 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Lambertus Hesselink
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Direct Write ◽  
Beam Parameters

Direct-Write E-beam Submicron Domain Engineering in LiNbO3 Thin Films Grown by Liquid Phase Epitaxy

2003 ◽  
Vol 784 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Liquid Phase ◽  
Domain Structure ◽  
Liquid Phase Epitaxy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Direct Write ◽  
Composition Effects ◽  
Domain Structures

ABSTRACTWe demonstrate submicron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO3 thin films grown on LiNbO3 and LiTaO3 substrates using a direct-write electron beam poling for waveguide applications. LiNbO3 thin films of several-micron thickness were grown using a flux melt of 20 mol% LiNbO3-80 mol% LiVO3. To engineer domain structures in Z- oriented LPE LiNbO3 films, a direct-write electron beam poling was implemented. It is shown that we can engineer the domain structure of LPE LiNbO3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are opposite. We also compared e-beam poling behavior in a congruent LiNbO3 single crystal and a LPE LiNbO3 film. Using the same e-beam scan parameters, a much enhanced domain structure is obtained in LPE films. Defect structure and composition effects are also discussed.

Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy LiNbO 3 thin films

2005 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Ludwig Galambos ◽  
Lambertus Hesselink
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Domain Engineering ◽  
Direct Write

Domain engineering in LiNbO3 thin films grown by liquid phase epitaxy

2003 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Domain Engineering

Domain engineering in LiNbO3 thin films grown by liquid phase epitaxy

2003 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Domain Engineering

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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