scholarly journals Extraction of an aluminum-nitride ion beam from a planar magnetron sputter type ion source

2018 ◽  
Author(s):  
K. Yoshioka ◽  
T. Kenmotsu ◽  
M. Wada
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Ion Source ◽  
Planar Magnetron ◽  
Magnetron Sputter

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma

Formation of an ion beam in a multiaperture ion source

1984 ◽  
Vol 27 (8) ◽  
pp. 745-751
Author(s):  
N. I. Danilovich
Keyword(s):  
Ion Beam ◽  
Ion Source

Structural Characteristics of Diamond-Like Carbon Films Synthesized by Different Methods

2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
High Energy ◽  
Carbon Films ◽  
Ion Source ◽  
Ordered Structure ◽  
Deposition Technique ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

Production of a highly charged uranium ion beam with RIKEN superconducting electron cyclotron resonance ion source

2012 ◽  
Vol 83 (2) ◽  
pp. 02A333 ◽  
Author(s):  
Y. Higurashi ◽  
J. Ohnishi ◽  
T. Nakagawa ◽  
H. Haba ◽  
M. Tamura ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Uranium Ion

High-Power Ion Beam Characteristics of a Magnetic Multi-Pole Line-Cusp Ion Source for the HL-2A Tokomak

2009 ◽  
Vol 26 (8) ◽  
pp. 082901 ◽  
Author(s):  
Zou Gui-Qing ◽  
Lei Guang-Jiu ◽  
Jiang Shao-Feng ◽  
Cao Jian-Yong ◽  
Yu Li-Ming ◽  
...  
Keyword(s):  
High Power ◽  
Ion Beam ◽  
Ion Source ◽  
Beam Characteristics
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