scholarly journals Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015114
Author(s):  
M. O. Eriksson ◽  
S. Khromov ◽  
P. P. Paskov ◽  
X. Wang ◽  
A. Yoshikawa ◽  
...  
Keyword(s):  
Type Conductivity ◽  
Recombination Processes ◽  
Mg Doped

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1726-1729 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Zhca-Yong Lai ◽  
Ching-Yuan Wu ◽  
Shoou-Jinn Chang
Keyword(s):  
Nitrogen Plasma ◽  
Type Conductivity ◽  
Plasma Activation ◽  
P Type ◽  
Mg Doped

scholarly journals Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

2015 ◽  
Vol 106 (23) ◽  
pp. 232102 ◽  
Author(s):  
S. Khromov ◽  
P. O. Å. Persson ◽  
X. Wang ◽  
A. Yoshikawa ◽  
B. Monemar ◽  
...  
Keyword(s):  
Structural Defects ◽  
Type Conductivity ◽  
Mg Doped

scholarly journals Acceptor formation in Mg-doped, indium-rich Ga x In1−xN: evidence for p-type conductivity

2012 ◽  
Vol 7 (1) ◽  
Author(s):  
Naci Balkan ◽  
Engin Tiras ◽  
Ayse Erol ◽  
Mustafa Gunes ◽  
Sukru Ardali ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

scholarly journals Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
T. C. Zheng ◽  
W. Lin ◽  
R. Liu ◽  
D. J. Cai ◽  
J. C. Li ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Raman and Photoluminescence Studies of Undoped and Magnesium-Doped Gan Films on Sapphire

1994 ◽  
Vol 339 ◽  
Author(s):  
Jaime A. Freitas ◽  
M. Asif Khan
Keyword(s):  
Room Temperature ◽  
Growth Direction ◽  
High Crystalline Quality ◽  
Photoluminescence Study ◽  
Recombination Processes ◽  
Scattering Measurements ◽  
Donor Acceptor ◽  
Intense Emission ◽  
Photoluminescence Studies ◽  
Mg Doped

ABSTRACTRoom temperature Raman scattering measurements performed on undoped GaN films indicate that high crystalline quality wurtzite material has been deposited on the basal plane of sapphire. Photoluminescence study of these films show that thicker films (t > 4μm) are homogeneous along the growth direction. The PL spectra of Mg-doped films are dominated by an intense emission band around 3.1 eV associated with recombination processes involving donor-acceptor pairs.

Carrier recombination processes in Mg-doped N-polar InN films

2011 ◽  
Vol 98 (18) ◽  
pp. 181908 ◽  
Author(s):  
Daichi Imai ◽  
Yoshihiro Ishitani ◽  
Masayuki Fujiwara ◽  
Kazuhide Kusakabe ◽  
Xinqian Wang ◽  
...  
Keyword(s):  
Carrier Recombination ◽  
Recombination Processes ◽  
Mg Doped

Infrared dispersion of dielectric function in Mg-doped LiNbO3 crystals with polaronic-type conductivity

2007 ◽  
Vol 38 (8) ◽  
pp. 994-997 ◽  
Author(s):  
G. Kh. Kitaeva ◽  
K. A. Kuznetsov ◽  
A. V. Shevlyuga ◽  
A. N. Penin
Keyword(s):  
Dielectric Function ◽  
Type Conductivity ◽  
Mg Doped

Effect of dimethylhydrazine on p-type conductivity of as-grown Mg-doped GaN

2009 ◽  
Vol 3 (2-3) ◽  
pp. 52-54
Author(s):  
Dong Hyuk Kim ◽  
Go Eun Lee ◽  
Euijoon Yoon ◽  
Do-Young Park ◽  
Hyeonsik Cheong ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped
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