scholarly journals Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

2015 ◽  
Vol 106 (23) ◽  
pp. 232102 ◽  
Author(s):  
S. Khromov ◽  
P. O. Å. Persson ◽  
X. Wang ◽  
A. Yoshikawa ◽  
B. Monemar ◽  
...  
Keyword(s):  
Structural Defects ◽  
Type Conductivity ◽  
Mg Doped

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1726-1729 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Zhca-Yong Lai ◽  
Ching-Yuan Wu ◽  
Shoou-Jinn Chang
Keyword(s):  
Nitrogen Plasma ◽  
Type Conductivity ◽  
Plasma Activation ◽  
P Type ◽  
Mg Doped

scholarly journals Acceptor formation in Mg-doped, indium-rich Ga x In1−xN: evidence for p-type conductivity

2012 ◽  
Vol 7 (1) ◽  
Author(s):  
Naci Balkan ◽  
Engin Tiras ◽  
Ayse Erol ◽  
Mustafa Gunes ◽  
Sukru Ardali ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

scholarly journals Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
T. C. Zheng ◽  
W. Lin ◽  
R. Liu ◽  
D. J. Cai ◽  
J. C. Li ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

scholarly journals Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015114
Author(s):  
M. O. Eriksson ◽  
S. Khromov ◽  
P. P. Paskov ◽  
X. Wang ◽  
A. Yoshikawa ◽  
...  
Keyword(s):  
Type Conductivity ◽  
Recombination Processes ◽  
Mg Doped

Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN

2002 ◽  
Vol 743 ◽  
Author(s):  
R. Liu ◽  
A. Bell ◽  
F. A. Ponce ◽  
D. Cherns ◽  
H. Amano ◽  
...  
Keyword(s):  
Growth Front ◽  
Structural Defects ◽  
Formation Mechanisms ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Direct Growth ◽  
Metal Organic ◽  
Edge Component ◽  
The Relationship ◽  
Mg Doped

ABSTRACTDifferent magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

Infrared dispersion of dielectric function in Mg-doped LiNbO3 crystals with polaronic-type conductivity

2007 ◽  
Vol 38 (8) ◽  
pp. 994-997 ◽  
Author(s):  
G. Kh. Kitaeva ◽  
K. A. Kuznetsov ◽  
A. V. Shevlyuga ◽  
A. N. Penin
Keyword(s):  
Dielectric Function ◽  
Type Conductivity ◽  
Mg Doped

Structural defects and p-type conductivity in ZnSe

Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 487-491 ◽  
Author(s):  
B. Fitzpatrick ◽  
G. Neumark ◽  
R. Bhargava ◽  
J. Vermaak
Keyword(s):  
Structural Defects ◽  
Type Conductivity ◽  
P Type
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