scholarly journals Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion

2019 ◽  
Vol 125 (4) ◽  
pp. 043103 ◽  
Author(s):  
AnYao Liu ◽  
Chang Sun ◽  
Hang Cheong Sio ◽  
Xinyu Zhang ◽  
Hao Jin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Transition Metals ◽  
High Performance ◽  
Multicrystalline Silicon ◽  
Phosphorus Diffusion ◽  
Silicon Nitride Films

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films

2003 ◽  
Vol 11 (2) ◽  
pp. 125-130 ◽  
Author(s):  
J. Hong ◽  
W. M. M. Kessels ◽  
F. J. H. van Assche ◽  
H. C. Rieffe ◽  
W. J. Soppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
High Rate ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Silicon Nitride Films ◽  
Bulk Passivation

Thermally grown silicon nitride films for high‐performance MNS devices

1978 ◽  
Vol 32 (5) ◽  
pp. 330-331 ◽  
Author(s):  
Takashi Ito ◽  
Takao Nozaki ◽  
Hideki Arakawa ◽  
Masaichi Shinoda
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Silicon Nitride Films ◽  
Thermally Grown

Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material

2006 ◽  
Vol 287 (2) ◽  
pp. 402-407 ◽  
Author(s):  
T. Buonassisi ◽  
A.A. Istratov ◽  
M.D. Pickett ◽  
J.-P. Rakotoniaina ◽  
O. Breitenstein ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Transition Metals ◽  
Multicrystalline Silicon ◽  
Lining Material ◽  
Ingot Cast

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

Highly dispersible silicon nitride whiskers in asymmetric porous separators for high-performance lithium-ion battery

2021 ◽  
Vol 621 ◽  
pp. 119001
Author(s):  
Peilong Zhou ◽  
Dongxu Yao ◽  
Kaihui Zuo ◽  
Yongfeng Xia ◽  
Jinwei Yin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lithium Ion Battery ◽  
High Performance ◽  
Lithium Ion
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