Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state

2018 ◽  
Vol 113 (18) ◽  
pp. 183102 ◽  
Author(s):  
Zahabul Islam ◽  
Aman Haque ◽  
Nicholas Glavin
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Real Time Visualization

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

2010 ◽  
Vol 96 (9) ◽  
pp. 092110 ◽  
Author(s):  
Markus Hofstetter ◽  
John Howgate ◽  
Ian D. Sharp ◽  
Maren Funk ◽  
Martin Stutzmann ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray

scholarly journals Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor

2020 ◽  
pp. 153537022097203
Author(s):  
Isra Mahaboob ◽  
Roger J Reinertsen ◽  
Benjamin McEwen ◽  
Kasey Hogan ◽  
Emma Rocco ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Real Time ◽  
Fluorescent Probe ◽  
Electron Mobility ◽  
Electrical Response ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Measurement Capability ◽  
Hydrogen Peroxide Detection

The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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