Apparatus and method for the growth of epitaxial complex oxides on native amorphous SiO2surface of (001) oriented single crystal silicon

2018 ◽  
Vol 89 (8) ◽  
pp. 085102 ◽  
Author(s):  
Prahallad Padhan ◽  
Umesh Kumar Sinha ◽  
Antarjami Sahoo
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Complex Oxides ◽  
Crystal Silicon ◽  
Oriented Single Crystal

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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