Covalent Graft Polymerization and Block Copolymerization Initiated by the Chlorinated SiO2(SiO2−Cl) Moieties of Glass and Oriented Single Crystal Silicon Surfaces

2005 ◽  
Vol 38 (4) ◽  
pp. 1051-1054 ◽  
Author(s):  
F. J. Xu ◽  
Q. J. Cai ◽  
E. T. Kang ◽  
K. G. Neoh
Keyword(s):  
Single Crystal ◽  
Graft Polymerization ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Block Copolymerization ◽  
Crystal Silicon ◽  
Oriented Single Crystal

Fracture fabrication of precision single-crystal silicon surfaces for MEMS devices

2011 ◽  
Vol 35 (3) ◽  
pp. 406-415
Author(s):  
Alexander Sprunt ◽  
Alexander Slocum ◽  
Jeffrey H. Lang
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Mems Devices ◽  
Crystal Silicon

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

Reactivity of selectively terminated single crystal silicon surfaces

2010 ◽  
Vol 39 (8) ◽  
pp. 3256 ◽  
Author(s):  
Kathryn A. Perrine ◽  
Andrew V. Teplyakov
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon

A TEMPERATURE-PROGRAMED DESORPTION STUDY OF THE ADSORPTION AND REACTIONS OF D2O ON SINGLE CRYSTAL SILICON SURFACES

1994 ◽  
Vol 01 (04) ◽  
pp. 505-507
Author(s):  
M.C. FLOWERS ◽  
N.B.H. JONATHAN ◽  
A. MORRIS ◽  
S. WRIGHT
Keyword(s):  
Single Crystal ◽  
Adsorption Kinetics ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Surfaces ◽  
Crystal Silicon ◽  
Single Crystal Surfaces ◽  
Langmuir Adsorption ◽  
First Order ◽  
Desorption Study

The adsorption of D 2O and subsequent desorption of D 2 and SiO from Si(100)-2×1 and Si(111)-7×7 single crystal surfaces have been investigated using the technique of temperatureprogramed desorption. It has been found that adsorption on Si(100)-2×1 is rapid and can be interpreted in terms of first-order Langmuir adsorption kinetics. In contrast, adsorption on the Si(111)-7×7 surface proceeds at a very much slower rate following an initial rapid uptake. It is found that the D 2 TPD peak arising from D 2 O exposure is very similar in shape, width, and desorption temperature to that from atomic deuterium exposure except that a small fraction of the adsorbed deuterium is retained to higher temperatures.

Nanometric cutting of single crystal silicon surfaces modified by ion implantation

CIRP Annals ◽  
2011 ◽  
Vol 60 (1) ◽  
pp. 527-530 ◽  
Author(s):  
F.Z. Fang ◽  
Y.H. Chen ◽  
X.D. Zhang ◽  
X.T. Hu ◽  
G.X. Zhang
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon ◽  
Nanometric Cutting
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