scholarly journals Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085213 ◽  
Author(s):  
Hongliang Guo ◽  
Yiyong Wu ◽  
Jingdong Xiao ◽  
Bin Guo ◽  
Qiang Sun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of CdTe solar cells

2003 ◽  
Vol 94 (5) ◽  
pp. 3549-3555 ◽  
Author(s):  
W. K. Metzger ◽  
D. Albin ◽  
D. Levi ◽  
P. Sheldon ◽  
X. Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Cdte Solar Cells ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of stimulated emission and exciton dynamics in ZnSe/ZnS0.18Se0.82 superlattices

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1133-1136
Author(s):  
C.J. Stevens ◽  
R.A. Taylor ◽  
J.F. Ryan ◽  
M. Dabbicco ◽  
M. Ferrara ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Time Resolved ◽  
Exciton Dynamics ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Enhanced recombination next to laser-patterned lines in CIGSe solar cells revealed by spectral and time-resolved photoluminescence

2021 ◽  
Vol 536 ◽  
pp. 147721
Author(s):  
Christof Schultz ◽  
Andreas Bartelt ◽  
Cornelia Junghans ◽  
Wolfgang Becker ◽  
Rutger Schlatmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

UNDERSTANDING ULTRAVIOLET EMITTER PERFORMANCE USING INTENSITY DEPENDENT TIME-RESOLVED PHOTOLUMINESCENCE

2007 ◽  
Vol 17 (01) ◽  
pp. 179-188 ◽  
Author(s):  
MICHAEL WRABACK ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN
Keyword(s):  
Radiative Lifetime ◽  
Active Regions ◽  
Pump Intensity ◽  
Performance Comparison ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Light Emitters ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of nitride semiconductors and ultraviolet light emitters comprised of these materials are performed as a function of pump intensity as a means of understanding and evaluating device performance. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Similar behavior is observed in optically pumped UV lasers. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.

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