scholarly journals Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

2018 ◽  
Vol 112 (23) ◽  
pp. 232102 ◽  
Author(s):  
Anup V. Sanchela ◽  
Mian Wei ◽  
Haruki Zensyo ◽  
Bin Feng ◽  
Joonhyuk Lee ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Thickness Dependence ◽  
Oxide Semiconductor ◽  
Large Thickness ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
La Doped

scholarly journals High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

2020 ◽  
Vol 116 (2) ◽  
pp. 022103 ◽  
Author(s):  
Mian Wei ◽  
Anup V. Sanchela ◽  
Bin Feng ◽  
Yuichi Ikuhara ◽  
Hai Jun Cho ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Electrical Conducting ◽  
Deep Ultraviolet ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
La Doped

scholarly journals Buffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3

2019 ◽  
Vol 7 (19) ◽  
pp. 5797-5802 ◽  
Author(s):  
Anup V. Sanchela ◽  
Mian Wei ◽  
Joonhyuk Lee ◽  
Gowoon Kim ◽  
Hyoungjeen Jeen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Hall Mobility ◽  
High Mobility ◽  
Buffer Layers ◽  
Oxide Semiconductor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
La Doped

Hall mobility of La-doped BaSnO3 films was improved without any buffer layers if the films are grown under O3 atmospheres.

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

2004 ◽  
Vol 85 (11) ◽  
pp. 1993-1995 ◽  
Author(s):  
Kenji Nomura ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Kazushige Ueda ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
Structural Randomness
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