ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide

2007 ◽  
Vol 90 (2) ◽  
pp. 021903 ◽  
Author(s):  
Matthijn Dekkers ◽  
Guus Rijnders ◽  
Dave H. A. Blank
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Oxide Semiconductor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
P Type

scholarly journals Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2Thin Films by RF Magnetron Sputtering

2010 ◽  
Vol 20 (12) ◽  
pp. 676-680
Author(s):  
Hye-Won Seok ◽  
Sei-Ki Kim ◽  
Hyun-Seok Lee ◽  
Tae-Young Lim ◽  
Jong-Hee Hwang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
P Type

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

2019 ◽  
Vol 7 (21) ◽  
pp. 6332-6336 ◽  
Author(s):  
Makoto Minohara ◽  
Naoto Kikuchi ◽  
Yoshiyuki Yoshida ◽  
Hiroshi Kumigashira ◽  
Yoshihiro Aiura
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Hole Mobility ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Oxide Semiconductor ◽  
Practical Applications ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
P Type

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature.

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