Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

2018 ◽  
Author(s):  
Sumita Choudhary ◽  
Rahul Narula ◽  
Subhashis Gangopadhyay
Keyword(s):  
Film Thickness ◽  
Film Resistivity ◽  
Cu Film ◽  
Geometrical Shapes

Research on Internal Stress in Electroplated Cu Films and Ni Films on Ag Substrates

2011 ◽  
Vol 287-290 ◽  
pp. 3085-3088
Author(s):  
Yao Min Zhu ◽  
Shan Shan Wang ◽  
Feng Zhang Ren
Keyword(s):  
Film Thickness ◽  
Internal Stress ◽  
Calculation Model ◽  
Internal Stresses ◽  
Film Material ◽  
Beam Test ◽  
Cu Films ◽  
Cu Film ◽  
Reduced Gradient

Electroplating was employed to prepare Cu films and Ni films on Ag substrates. The average internal stresses in Cu film and Ni film were measured in situ by cantilever beam test. The values of experimental internal stresses were compared with theoretical internal stresses. The results showed that the internal stresses of Cu film and Ni film decreased with the increase of the film thickness. The reduced gradient was faster. The values of experimental and theoretical internal stresses had the same variation trend with film thickness and the same characteristics (tensile stress). Theoretical calculation model of internal stress was of accuracy. The internal stress for the same substrate was in relation to the film material.

Dependence of Resistivity on Thickness of Vacuum Deposited Copper Thin Films

2020 ◽  
Vol 12 (8) ◽  
pp. 1125-1129
Author(s):  
Shrutidhara Sarma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Empirical Relationship ◽  
Temperature Sensors ◽  
Vacuum Deposition ◽  
Deposition Chamber ◽  
Probe Technique ◽  
Film Resistivity ◽  
Electrical Systems

In depth understanding of resistivity of metals is of utmost importance for optimizing circuit designs and electrical systems. In this study, we investigated the relation between film thickness (in the range of 25−350 nm) and film resistivity of Cu thin films, with respect to thin film temperature sensors. The films were deposited in a vacuum deposition chamber over pyrex substrates and the film resistances were measured using 4 point probe technique. The empirical relationship established by Lacy has been used along with our experimental results in order to calculate the constants relating the filmsubstrate compatibility, which influences the change of resistivity with thickness.

Influences of Ti Film Thickness on Electrochemical Properties of Si/Ti/Cu Film Electrodes

2012 ◽  
Vol 12 (7) ◽  
pp. 5962-5966
Author(s):  
Gyu-Bong Cho ◽  
Sang-Hun Lee ◽  
Ho-Jin Sung ◽  
Jung-Pil Noh ◽  
Hyo-Jun Ahn ◽  
...  
Keyword(s):  
Film Thickness ◽  
Electrochemical Properties ◽  
Cu Film

Influence of Direct Current Magnetron Sputtering Parameters on Electrical Properties of Copper Films

2010 ◽  
Vol 37-38 ◽  
pp. 540-543
Author(s):  
Yin Qun Hua ◽  
Rui Fang Chen ◽  
Zhong Xiu Niu ◽  
Jie Yu
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Zone Model ◽  
Temperature Structure ◽  
Working Pressure ◽  
Cu Films ◽  
Film Resistivity ◽  
Sputtering Power ◽  
Cu Film ◽  
Rate Of Increase

Cu thin films were prepared by DC magnetron sputtering on Si substrate, and the resistivities change by adjusting its sputtering parameters. It is found that the changes of the sputtering power and substrate temperature and working pressure can affect significantly the Cu film resistivity (ρ). The Cu films resistivity decreases with the increasing of sputtering power. As the substrate temperature “structure zone model” effect, the Cu film resistivity decreases when the substrate temperature was less than 150°C. The resistivities (ρ) begin to increase gradually at various temperatures ranging from 150°C to 300°C, but the rate of increase is not significant. The resistivity abnormal increases when the substrate temperature was 400°C. The Cu films resistivity increases with argon working gas pressure ranging from 0.15 Pa to 2 Pa.

scholarly journals The Accuracy of Al and Cu Film Thickness Determinations and the Implications for Electron Probe Microanalysis

2018 ◽  
Vol 24 (2) ◽  
pp. 83-92 ◽  
Author(s):  
Mike B. Matthews ◽  
Stuart L. Kearns ◽  
Ben Buse
Keyword(s):  
Film Thickness ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Film ◽  
Reduced Density ◽  
20 Nm ◽  
Linear Trends

AbstractThe accuracy to which Cu and Al coatings can be determined, and the effect this has on the quantification of the substrate, is investigated. Cu and Al coatings of nominally 5, 10, 15, and 20 nm were sputter coated onto polished Bi using two configurations of coater: One with the film thickness monitor (FTM) sensor colocated with the samples, and one where the sensor is located to one side. The FTM thicknesses are compared against those calculated from measured Cu Lαand Al Kα k-ratios using PENEPMA, GMRFilm, and DTSA-II. Selected samples were also cross-sectioned using focused ion beam. Both systems produced repeatable coatings, the thickest coating being approximately four times the thinnest coating. The side-located FTM sensor indicated thicknesses less than half those of the software modeled results, propagating on to 70% errors in substrate quantification at 5 kV. The colocated FTM sensor produced errors in film thickness and substrate quantification of 10–20%. Over the range of film thicknesses and accelerating voltages modeled both the substrate and coatingk-ratios can be approximated by linear trends as functions of film thickness. The Al films were found to have a reduced density of ~2 g/cm2.

scholarly journals Brittle-to-ductile transition in ultrathin Ta/Cu film systems

2009 ◽  
Vol 24 (6) ◽  
pp. 1906-1918 ◽  
Author(s):  
Patric A. Gruber ◽  
Eduard Arzt ◽  
Ralph Spolenak
Keyword(s):  
Integrated Circuits ◽  
Film Thickness ◽  
Tensile Tests ◽  
Testing Technique ◽  
Cracking Behavior ◽  
Cu Films ◽  
Brittle To Ductile Transition ◽  
Compliant Substrates ◽  
Cu Film

Current semiconductor technology demands the use of compliant substrates for flexible integrated circuits. However, the maximum total strain of such devices is often limited by the extensibility of the metallic components. Although cracking in thin films is extensively studied theoretically, little experimental work has been carried out thus far. Here, we present a systematic study of the cracking behavior of 34- to 506-nm-thick Cu films on polyamide with 3.5-to 19-nm-thick Ta interlayers. The film systems have been investigated by a synchrotron-based tensile testing technique and in situ tensile tests in a scanning electron microscope. By relating the energy release during cracking obtained from the stress-strain curves to the crack area, the fracture toughness of the Cu films can be obtained. It increases with Cu film thickness and decreases with increasing Ta film thickness. Films thinner than 70 nm exhibit brittle fracture, indicating an increasing inherent brittleness of the Cu films.

AN INVESTIGATION OF SMOOTH NANOSIZED COPPER FILMS ON GLASS SUBSTRATE BY IMPROVED ELECTROLESS PLATING

2006 ◽  
Vol 13 (04) ◽  
pp. 471-478 ◽  
Author(s):  
HUIPING ZHANG ◽  
ZHONGHAO JIANG ◽  
XIANLI LIU ◽  
JIANSHE LIAN
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Electroless Plating ◽  
Glass Substrate ◽  
Deposition Time ◽  
Copper Films ◽  
Diffraction Intensity ◽  
Cu Films ◽  
Fine Grain ◽  
Cu Film

Thin nanocrystalline Cu films (< 1 μm) are deposited on a glass substrate using an improved electroless plating technique. The deposition course of the Cu film is illustrated by the variation of surface morphology with different deposition time. The results show that a more uniform and continuous nanocrystalline Cu film with very small nodules can be formed on a glass substrate at the deposition time over 1 min. The roles of SDBS as an additive in the bath are also discussed. According to the relation of the film thickness and the deposition time, it is obvious that the film thickness nearly linearly varies with the deposition time in the present work. An enhanced (111) texture with the diffraction intensity ratio (I(111)/I(200)) of about 4.0 and the very fine grain size of 15–28 nm determined by X-ray results has been observed. The variations of the resistivity show that it is strongly affected by the film thickness and grain size.

Effect of Film Thickness on the Annealing Texture in Sputtered and Electroplated Cu Films

2006 ◽  
Vol 15-17 ◽  
pp. 982-988
Author(s):  
Sang Hoon Lee ◽  
No Jin Park ◽  
David P. Field ◽  
Paul R. Besser
Keyword(s):  
Film Thickness ◽  
Grain Growth ◽  
Processing Conditions ◽  
X Ray ◽  
Cu Films ◽  
Annealing Texture ◽  
Cu Film ◽  
The Relationship ◽  
Si Wafer

For optimum fabrication and usage of Cu films, an understanding of the relationship between processing and microstructure is required. The existence of twins is another significant factor for texture development in Cu films. Texture character and strength in the Cu film is dependent on the twin boundary development that is a function of processing conditions and film thickness. In this study, determination of grain growth and texture in the sputtered and electroplated Cu films during annealing was performed for films of 100, 480 and 850 nm in thickness deposited on a Ta(25 nm)/Si wafer. The texture was measured by X-ray pole figure. The effect of film thickness on the annealing texture in the sputtered and electroplated Cu films is examined and discussed.

In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone

2013 ◽  
Vol 108 ◽  
pp. 66-70 ◽  
Author(s):  
Zilian Qu ◽  
Qian Zhao ◽  
Yonggang Meng ◽  
Tongqing Wang ◽  
Dewen Zhao ◽  
...  
Keyword(s):  
Film Thickness ◽  
Eddy Current ◽  
Current Method ◽  
In Situ Measurement ◽  
Eddy Current Method ◽  
Cu Film

The mechanical properties of freestanding electroplated Cu thin films

2006 ◽  
Vol 21 (6) ◽  
pp. 1607-1618 ◽  
Author(s):  
Y. Xiang ◽  
T.Y. Tsui ◽  
J.J. Vlassak
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Yield Stress ◽  
Crystallographic Texture ◽  
Elastic Anisotropy ◽  
Orientation Distribution ◽  
Dislocation Motion ◽  
Distribution Functions ◽  
Bulge Test ◽  
Cu Film

The plane-strain bulge test is used to investigate the mechanical behavior of freestanding electroplated Cu thin films as a function of film thickness and microstructure. The stiffness of the films increases slightly with decreasing film thickness because of changes in the crystallographic texture and the elastic anisotropy of Cu. Experimental stiffness values agree well with values derived from single-crystal elastic constants and the appropriate orientation distribution functions. No modulus deficit is observed. The yield stress of the films varies with film thickness and heat treatment as a result of changes in the grain size of the films. The yield stress follows typical Hall-Petch behavior if twins are counted as distinct grains, indicating that twin boundaries are effective barriers to dislocation motion. The Hall-Petch coefficient is in good agreement with values reported for bulk Cu. Film thickness and crystallographic texture have a negligible effect on the yield stress of the films.

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