Influences of Ti Film Thickness on Electrochemical Properties of Si/Ti/Cu Film Electrodes

2012 ◽  
Vol 12 (7) ◽  
pp. 5962-5966
Author(s):  
Gyu-Bong Cho ◽  
Sang-Hun Lee ◽  
Ho-Jin Sung ◽  
Jung-Pil Noh ◽  
Hyo-Jun Ahn ◽  
...  
Keyword(s):  
Film Thickness ◽  
Electrochemical Properties ◽  
Cu Film

Research on Internal Stress in Electroplated Cu Films and Ni Films on Ag Substrates

2011 ◽  
Vol 287-290 ◽  
pp. 3085-3088
Author(s):  
Yao Min Zhu ◽  
Shan Shan Wang ◽  
Feng Zhang Ren
Keyword(s):  
Film Thickness ◽  
Internal Stress ◽  
Calculation Model ◽  
Internal Stresses ◽  
Film Material ◽  
Beam Test ◽  
Cu Films ◽  
Cu Film ◽  
Reduced Gradient

Electroplating was employed to prepare Cu films and Ni films on Ag substrates. The average internal stresses in Cu film and Ni film were measured in situ by cantilever beam test. The values of experimental internal stresses were compared with theoretical internal stresses. The results showed that the internal stresses of Cu film and Ni film decreased with the increase of the film thickness. The reduced gradient was faster. The values of experimental and theoretical internal stresses had the same variation trend with film thickness and the same characteristics (tensile stress). Theoretical calculation model of internal stress was of accuracy. The internal stress for the same substrate was in relation to the film material.

Structural and Electrochemical Properties of a Si/C/Cu Film Anode Electrode

2007 ◽  
pp. 1057-1060
Author(s):  
Gyu Bong Cho ◽  
Min Gan Song ◽  
Won Chul Sin ◽  
Tae Hyun Nam ◽  
Ki Won Kim
Keyword(s):  
Electrochemical Properties ◽  
Cu Film ◽  
Anode Electrode

scholarly journals The Accuracy of Al and Cu Film Thickness Determinations and the Implications for Electron Probe Microanalysis

2018 ◽  
Vol 24 (2) ◽  
pp. 83-92 ◽  
Author(s):  
Mike B. Matthews ◽  
Stuart L. Kearns ◽  
Ben Buse
Keyword(s):  
Film Thickness ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Film ◽  
Reduced Density ◽  
20 Nm ◽  
Linear Trends

AbstractThe accuracy to which Cu and Al coatings can be determined, and the effect this has on the quantification of the substrate, is investigated. Cu and Al coatings of nominally 5, 10, 15, and 20 nm were sputter coated onto polished Bi using two configurations of coater: One with the film thickness monitor (FTM) sensor colocated with the samples, and one where the sensor is located to one side. The FTM thicknesses are compared against those calculated from measured Cu Lαand Al Kα k-ratios using PENEPMA, GMRFilm, and DTSA-II. Selected samples were also cross-sectioned using focused ion beam. Both systems produced repeatable coatings, the thickest coating being approximately four times the thinnest coating. The side-located FTM sensor indicated thicknesses less than half those of the software modeled results, propagating on to 70% errors in substrate quantification at 5 kV. The colocated FTM sensor produced errors in film thickness and substrate quantification of 10–20%. Over the range of film thicknesses and accelerating voltages modeled both the substrate and coatingk-ratios can be approximated by linear trends as functions of film thickness. The Al films were found to have a reduced density of ~2 g/cm2.

scholarly journals Brittle-to-ductile transition in ultrathin Ta/Cu film systems

2009 ◽  
Vol 24 (6) ◽  
pp. 1906-1918 ◽  
Author(s):  
Patric A. Gruber ◽  
Eduard Arzt ◽  
Ralph Spolenak
Keyword(s):  
Integrated Circuits ◽  
Film Thickness ◽  
Tensile Tests ◽  
Testing Technique ◽  
Cracking Behavior ◽  
Cu Films ◽  
Brittle To Ductile Transition ◽  
Compliant Substrates ◽  
Cu Film

Current semiconductor technology demands the use of compliant substrates for flexible integrated circuits. However, the maximum total strain of such devices is often limited by the extensibility of the metallic components. Although cracking in thin films is extensively studied theoretically, little experimental work has been carried out thus far. Here, we present a systematic study of the cracking behavior of 34- to 506-nm-thick Cu films on polyamide with 3.5-to 19-nm-thick Ta interlayers. The film systems have been investigated by a synchrotron-based tensile testing technique and in situ tensile tests in a scanning electron microscope. By relating the energy release during cracking obtained from the stress-strain curves to the crack area, the fracture toughness of the Cu films can be obtained. It increases with Cu film thickness and decreases with increasing Ta film thickness. Films thinner than 70 nm exhibit brittle fracture, indicating an increasing inherent brittleness of the Cu films.

Structural and Electrochemical Properties of a Si/C/Cu Film Anode Electrode

2007 ◽  
Vol 544-545 ◽  
pp. 1057-1060
Author(s):  
Gyu Bong Cho ◽  
Min Gan Song ◽  
Won Chul Sin ◽  
Tae Hyun Nam ◽  
Ki Won Kim
Keyword(s):  
Electrochemical Properties ◽  
Carbon Film ◽  
Cycle Performance ◽  
Discharge Process ◽  
Cu Substrate ◽  
Cu Film ◽  
Anode Electrode ◽  
Average Size ◽  
Si Films ◽  
Surface Morphologies

Si film electrodes for Li micro-film batteries were fabricated on a Cu substrate and a Ci/Cu film. In the structural properties, FE-SEM observation demonstrated difference in surface morphologies of Si films with different under layers. Surface of the Si film deposited consists of clusters and average size of the cluster was 165 nm for Si/Cu film and 80 nm for Si/C/Cu film. Si film has amorphous phase in spite of different under layers; Cu substrate and C/Cu film. In the electrochemical properties, the carbon-inserted film showed a good cycleability compared with Si/Cu electrode. It is believed that the insertion of carbon film as a buffer film absorbed the stress generated during charge-discharge process and improved cycle performance of Si anode electrode.

AN INVESTIGATION OF SMOOTH NANOSIZED COPPER FILMS ON GLASS SUBSTRATE BY IMPROVED ELECTROLESS PLATING

2006 ◽  
Vol 13 (04) ◽  
pp. 471-478 ◽  
Author(s):  
HUIPING ZHANG ◽  
ZHONGHAO JIANG ◽  
XIANLI LIU ◽  
JIANSHE LIAN
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Electroless Plating ◽  
Glass Substrate ◽  
Deposition Time ◽  
Copper Films ◽  
Diffraction Intensity ◽  
Cu Films ◽  
Fine Grain ◽  
Cu Film

Thin nanocrystalline Cu films (< 1 μm) are deposited on a glass substrate using an improved electroless plating technique. The deposition course of the Cu film is illustrated by the variation of surface morphology with different deposition time. The results show that a more uniform and continuous nanocrystalline Cu film with very small nodules can be formed on a glass substrate at the deposition time over 1 min. The roles of SDBS as an additive in the bath are also discussed. According to the relation of the film thickness and the deposition time, it is obvious that the film thickness nearly linearly varies with the deposition time in the present work. An enhanced (111) texture with the diffraction intensity ratio (I(111)/I(200)) of about 4.0 and the very fine grain size of 15–28 nm determined by X-ray results has been observed. The variations of the resistivity show that it is strongly affected by the film thickness and grain size.

Effect of Film Thickness on the Annealing Texture in Sputtered and Electroplated Cu Films

2006 ◽  
Vol 15-17 ◽  
pp. 982-988
Author(s):  
Sang Hoon Lee ◽  
No Jin Park ◽  
David P. Field ◽  
Paul R. Besser
Keyword(s):  
Film Thickness ◽  
Grain Growth ◽  
Processing Conditions ◽  
X Ray ◽  
Cu Films ◽  
Annealing Texture ◽  
Cu Film ◽  
The Relationship ◽  
Si Wafer

For optimum fabrication and usage of Cu films, an understanding of the relationship between processing and microstructure is required. The existence of twins is another significant factor for texture development in Cu films. Texture character and strength in the Cu film is dependent on the twin boundary development that is a function of processing conditions and film thickness. In this study, determination of grain growth and texture in the sputtered and electroplated Cu films during annealing was performed for films of 100, 480 and 850 nm in thickness deposited on a Ta(25 nm)/Si wafer. The texture was measured by X-ray pole figure. The effect of film thickness on the annealing texture in the sputtered and electroplated Cu films is examined and discussed.

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